1) modulated photothermal reflectance
调制光热反射
1.
A new approach for measuring thermal diffusivity of solid material by modulated photothermal reflectance(MPR) technique was introduced.
提出一种利用调制光热反射(MPR)技术测量固体材料热扩散率的新方法。
2.
Modulated photothermal reflectance(MPR) technique is one ofmeasurement methods which are based on the photothermal effect.
调制光热反射(MPR)技术是一种基于光热效应建立和发展起来的光热测量技术。
2) thermo modulation reflection spectrum
热调制反射光谱
3) photoreflectance
光调制反射
1.
Photoluminescence (PL) and photoreflectance (PR) spectra of GaInNAs/GaAs multiple quantum wells (MQWs) grown on GaAs substrate by MBE are measured over a range of temperature and excitation power density.
研究了 Ga In NAs/Ga As多量子阱在不同温度和激发功率下的光致发光 (PL )谱以及光调制反射 (PR)谱 。
2.
The experimental results in GaAs/AlGaAs and strained InGaAs/GaAs multiple quantum wells by using DR technique at room temperature were presented, and compared with the experimental results of photoreflectance (PR) spectra and the theoretical values.
报道一种通过转动样品来实现空间调制微分反射（ＤＲ）光谱技术，给出ＧａＡｓ／ＡｌＧａＡｓ多量子阱和应变ＩｎＧａＡｓ／ＧａＡｓ多量子阱在室温下的ＤＲ谱实验测量结果，并与光调制反射谱（ＰＲ）实验和理论计算结果相比较。
3.
The photoluminescence, photoreflectance and Raman spectra of ZnTe/Zn 1 x Mn x Te superlattice samples grown by MBE technique were studied from 11 to 80K.
在１１Ｋ－８０Ｋ温度范围内研究了用ＭＢＥ生长的ＺｎＴｅ／Ｚｎ１－ｘＭｎｘＴｅ超晶格样品的光致发光光谱、光调制反射谱和拉曼散射谱。
4) Modulated photoreflectance
调制光反射
5) photoreflectance spectroscopy
光调制反射光谱
1.
In this article,we report another form o f photoreflectance spectroscopy-space differential photoreflectance (SDPR) spec troscopy.
本文报道了空间差分光调制反射光谱 ,指出了它与常规光调制反射谱的区别。
6) thermoreflectance
热调制反射谱
1.
8 As/GaAs multiple quantum wells structure by using photoreflectance(PR)and thermoreflectance(TR)techniques at 77K were presented With a least square fit of lineshape function,the intersubband transitions in PR spectra can be clearly identified in the multiple quantum wells and compared with an envolope-function calculation.
８）Ａｓ／ＧａＡｓ应变多量子阱在７７Ｋ下的光调制反射谱（ＰＲ）和热调制反射谱（ＴＲ）进行了实验研究。
补充资料：电势调制电反射法
分子式：
CAS号：
性质：改变电极电势，测量由电势调制引起的固体电极表面的光反射率变化的方法。该法可以用来得到半导体电极的平带电势、表面电荷、能带隙中表面态和金属电极界面的双电层结构等。
CAS号：
性质：改变电极电势，测量由电势调制引起的固体电极表面的光反射率变化的方法。该法可以用来得到半导体电极的平带电势、表面电荷、能带隙中表面态和金属电极界面的双电层结构等。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条