1) SU-8 photoresist
高深宽比微结构
1.
Various high aspect ratio microstructures were prepared on the basis of UV-LIGA technique by using a new type of SU-8 photoresist.
采用新型SU-8光刻胶在UV-LIGA技术基础上制备了各种高深宽比MEMS微结构,研究了热处理和曝光两个重要因素对高深宽比微结构的影响,解决了微结构的开裂和倒塌等问题;优化了SU-8胶工艺,从而获得了最大深宽比为27:1的微结构。
2) injection molded parts with high aspect ratio micro structures
高深宽比微结构零件
1.
The filling field characteristics of injection molded parts with high aspect ratio micro structures were investigated by the ways of theoretical analysis, numerical simulation and experiments, then the filling characteristic and the factors which migh.
本文采用理论分析、数值模拟和实验验证相结合的方法研究了高深宽比微结构零件注射成型充填流动过程，分析了其充填流动特性和其充填深度的影响因素。
3) structure of high aspect-ratio
高深宽比结构
4) High aspect ratio photoresist structures
高深宽比光刻胶结构
5) high aspect ratio
高深宽比
1.
Simplified microfabrication technology for producing SU-8 microstructures with high aspect ratio;
高深宽比SU-8微结构的简易加工技术
2.
Dry etching technique for silicon of high aspect ratio in MEMS device fabrication;
MEMS器件制造工艺中的高深宽比硅干法刻蚀技术
3.
A key problem was analyzed in the electrical discharge machining(EDM) of the high aspect ratio micro-structures.
针对电火花加工高深宽比微细结构时放电间隙小、加工产物不易排除的技术难题,在分析电火花加工电蚀产物稳定性的理论基础上,结合脉冲超声聚焦技术,提出了激波压力扰动辅助电火花加工高深宽比微细结构的方法,设计了激励电源和激波发生器试验装置,测试了相应的电功率和声功率。
6) high-aspect-ratio
高深宽比
1.
Numericall Analysis on Mass Transport in Micro Electroforming of Micro Structures with High-aspect-ratio;
高深宽比微细结构电铸时传质过程数值分析
2.
In the proposed technology,a movable mask with low-aspect-ratio patterns was used to confine the area of electrodeposition dynamically in order to produce high-aspect-ratio metal microstructures.
针对金属微结构器件制造难的问题,提出了活动屏蔽膜板高深宽比微细电铸技术,通过屏蔽膜板动态地限制电沉积的区域,可以用低深宽比的膜板图形加工出高深宽比的金属微结构,并且免除了去胶等难题。
3.
Various processes of microstructures were studied to fabricate high-aspect-ratio winding coil on the stator coil of a planar micromotor.
为了在平面微电机有限大尺寸的定子上制作高深宽比结构的绕组线圈,对高深宽比微结构的制作工艺进行了研究,综合比较各方面因素,从中找出了成品率高、可重复性好、工艺步骤尽量简单的平面线圈制作工艺,即在硅沟槽里通过微电铸得到高深宽比平面铜线圈的深刻蚀成型电铸工艺,并分析了光刻工艺关键参数之间的关系及对后续工艺的影响。
补充资料：宽禁带半导体(见半导体的能带结构)
宽禁带半导体(见半导体的能带结构)
wide gap semiconductor
习一’平叼能带结构。‘J~正J“、二二，，Conauctor见半
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条