1) Darlington configuration
达林顿结构
1.
A low noise microwave monolithic integrated circuit(MMIC)using Darlington configuration SiGe hetero-junction bipolar transistors(HBT s)is presented.
该电路以达林顿结构的形式级联,由两个异质结双极型晶体管(HBT)和4个电阻组成;HBT采用准自对准结构,其SiGe基区为非选择性外延。
2) Warrington construction
瓦林顿结构
3) Darlington
达林顿
1.
The Design and Fabrication of High Gain and Power of Darlington Transistor;
高增益大功率达林顿晶体管的设计与制造
2.
The main work includes the analysis of trench terminal structures,theoretical analysis and design of trenched Darlington power transistor,process and device computer simulations of trenched Darlington transistor,trenched Darlington transistor layout design and process implementation,as well as the measurement and test of sample device.
论文的主要工作包括:隔离结构分析;槽型结构达林顿功率晶体管设计的理论分析;槽型达林顿功率晶体管的工艺与器件计算机仿真;槽型达林顿晶体管的版图设计、工艺实现以及试验样管的测试分析。
4) architecture of Princeton and Harvard
普林斯顿和哈佛结构
6) Darlington PCI board
达林顿PCI板
补充资料：顿顿
1.诚恳敦厚貌。顿，通"敦"。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条