1) drift region thinned
减薄漂移区
2) thin drift region
薄漂移区
1.
Breakdown Voltage Model and New Structures of the Lateral High Voltage Devices with Thin Drift Region;
薄漂移区横向高压器件耐压模型及新结构
2.
An analytical breakdown model for thin drift region RESURF LDMOS with a step doping profile is presented.
提出硅基阶梯掺杂薄漂移区RESURFLDMOS耐压解析模型。
3) drift
[英][drɪft] [美][drɪft]
漂移区
1.
The influences of five parameters(the doses of the drift,the length of the field plate,the thickness of field oxide layer,the thickness of gate oxide layer,the doses of the channel) on the nonlinear Cd were discussed.
借助软件模拟从器件结构和工艺参数角度研究了LDMOS漏电容Cd的非线性和源漏电压Vds的关系,研究了漂移区注入剂量、高压场板长度、场氧化层厚度、栅氧化层厚度、沟道区注入剂量等五个结构工艺参数对漏电容非线性的影响。
2.
A novel analytic model on the relationship about the surface voltage and the PN junction electric field with the ion dose in the drift of gate off MOS is presented.
本文提出了偏置栅MOS管漂移区离子注入剂量对表面电压和PN结边界电场两者关系的一种新的分析模型 ,借助数学推导得到该模型的计算方程 ,通过仿真曲线图能清楚地看到它们之间的变化关系 ,同时说明提高偏置栅MOS管击穿电压的方
4) drift region
漂移区
1.
By using the software of ISE and the patterned SOI LDMOS with good performance,the relationship between transconductance and the thickness of gate oxide and SOI layer ,the concentration of the drift region and the channel are all discussed in this paper.
借助ISE软件,以调试后各参数性能优良的图形化SOI LDMOS器件为仿真平台,研究并分析了栅氧化层厚度,漂移区浓度,沟道浓度,SOI层厚度四个结构工艺参数对图形化SOI LDMOS跨导gm的影响。
2.
The influence of the parameters of the drift region,channel region and field plate on the breakdown voltage of the high voltage PLDMOS has been investigated by using the simulators Tsupre-4 and Medici.
借助半导体专业软件Tsuprem-4和Medici详细研究了漂移区的长度、浓度以及结深,沟道区的长度、浓度,场极板的长度对高压PLDMOS击穿电压的影响。
3.
The model includes physical models for nonuniformly doped channel,non-linear drift region resistance and voltage-depending non-linear parasitical capacitances.
基于高压VDM O S器件的物理机理和特殊结构,对非均匀掺杂沟道、漂移区非线性电阻及非线性寄生电容效应进行分析,用多维非线性方程组描述了器件特性与各参数之间的关系,建立了精确的高压六角型元胞VDM O S器件三维物理模型,并用数值方法求解。
5) N-drift region
N-漂移区
6) drift region
漂移区域
补充资料：减薄
1.亦作"减薄"。 2.降低;减弱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条