1) Ultra-thin-SOI
超薄SOI
2) thin film SOI
薄膜SOI
1.
Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
给出了漂移区为线性掺杂的高压薄膜SOI器件的设计原理和方法 。
4) Silicon on insulator
SOI
1.
An ultracompact 3 dB coupler is designed and fabricated in silicon on insulator,based on 1×2 line tapered multimode interference (MMI) coupler.
采用线锥形结构 ,在 silicon- on- insulator(SOI)材料上设计并实现了一种新的紧缩型 3- d B多模干涉耦合器(MMI) 。
2.
A 4×4 area modulation silicon on insulator (SOI) multimode interference coupler optical switch, composed of four cascaded 2×2 area modulation optical switches, has been designed.
根据区域调制多模干涉耦合器光开关的工作原理 ,以 2× 2区域调制多模干涉光开关为基础 ,采用级联的方式设计了 4× 4区域调制多模干涉SOI光波导开关。
3.
Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiationhardening, no parasitic capacitance and latchup effect.
绝缘体上生长的薄单晶硅膜 (SOI)具有良好的横向绝缘、抗辐照、无锁存效应和无寄生电容 ,并能有效地提高硅集成电路的速度和集成度 ,在深亚微米 VL SI技术中 ,具有很大的优势和潜力。
5) thin film/thick BOX SOI
薄膜厚埋层SOI材料
1.
A thin film/thick BOX SOI with SOI layer thickness of 130nm,BOX thickness of 1μm,and SOI layer thickness uniformity of ±2% was fabricated with SWB technology.
采用该新技术成功制备出薄膜厚埋层SOI材料,顶层硅厚度130nm,埋氧层厚度1μm,顶层硅厚度均匀性±2%。
6) Ultra thin
超薄
1.
This expression can be used to calculate the DT current for nMOSFETs with ultra thin oxide when the oxide thickness is considered as an adjustable parameter.
将氧化层厚度作为可调参数 ,用这个经验公式可以很好地拟合超薄氧化物 n MOSFET器件的直接隧穿电流 。
补充资料：超超
1.谓超然出尘。 2.高高在上貌。 3.犹绰绰。 4.见"超超玄箸"。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条