1) non-selective epitaxy
非选择性外延
1.
Based on the non-selective epitaxy,self-aligned base/emitter and selective implanted collector,a kind of SiGe HBT structure for 1.
基于非选择性外延,基极/发射极自对准和集电区选择性注入,提出了一种可用于1。
2) Non-selective pattern epitaxy
非选择性图形外延
3) selective epitaxy
选择性外延
1.
To satisfy the requirement for high performance infrared detector,a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求,以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
4) selective epitaxial growth
选择性外延生长
1.
The selective epitaxial growth (SEG) of Si_ 1-x Ge_x is successfully achieved at a very low temperature by UHV/CVD.
利用超高真空化学气相沉积(UHV/CVD)成功实现了Si1-xGex的低温选择性外延生长,并研究了H2对选择性外延生长的影响及其作用机理。
5) selective area growth
选择外延
1.
High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.
利用选择外延技术研制了 1 5 μmDFB激光器和自对准模斑转换器单片集成器件 。
补充资料：连续性与非连续性(见间断性与不间断性)
连续性与非连续性(见间断性与不间断性)
continuity and discontinuity
11an父ux泊g四f“山。麻以角g、.连续性与非连续性(c。nt，n琳t:nuity一)_见间断性与不间断性。and diseo红ti-
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条