1) Gate current
栅电流
1.
Comparisons are made for gate current behavior between nMOSFET and pMOSFET high-k gate stack structures.
介绍了一种纳米MOSFET(场效应管)栅电流的统一模型,该模型基于Schr dinger-Poisson方程自洽全量子数值解,特别适用于高k栅介质和多层高k栅介质纳米MOSFET。
2.
It is found that in a certain range of gate voltage V_g, the gate current I_g follows the Fowler-Nordheim-like tunneling mechanism, and the experimental tunneling barrier _b is 0.
发现在一定的栅电压Vg范围内,软击穿后的栅电流Ig符合Fowler-Nordheim隧穿公式,但室温下隧穿势垒b的平均值仅为0·936eV,远小于Si/SiO2界面的势垒高度3·15eV。
3.
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
在该模型的基础上 ,研究了采用不同高介电常数栅介质材料时MOSFET的栅电流与介质材料的介电常数、禁带宽度及和Si导带不连续等参数之间的关系 。
2) negative grid current
反栅流;负栅电流
3) screen-grid current
屏栅电流
4) positive grid current
正栅电流
5) grid electric current
栅极电流
1.
Via measuring the grid electric current and the board electric current,the first excitation potential of argon atom are achieved.
测量了夫兰克赫兹实验中氩气管的经典线性伏安特性曲线,分别从栅极电流和板极电流的实验数据中反应出的氩原子第一激发能级量子化吸收的特性,并对量子吸收理论在实验中的体现加以探讨。
6) gate-leakage current
栅漏电流
1.
The impact of gate-leakage current on device characteristic becomes obvious with the continuous scaling of MOSFETs.
随着MOSFET尺寸的不断减小,栅漏电流对器件特性的影响日益明显。
补充资料：标准冲击电流波形(见冲击电流发生器)
标准冲击电流波形(见冲击电流发生器)
standard impulse current wave form
blaozhun ehonglld}0n4一u box]ng标准冲击电流波形(standard impulse currentwave form)见冲击电流发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条