The devoloping tendency for the 21st century on the low dimensional physics,nanometer materials,organic semiconductor,self-assembing growth,photoelectronic integration and quantum devices were introduced to mark the both anniversary of the invention of transistor.

A novel transparent thin-film transistor was fabricated by rf reactive magnetron sputtering,structure of which was that ITO glass was used as substrate,Al2O3 and AlN as insulator layers were deposited onto it successively,and then active layer ZnO film was deposited onto the Al2O3/AlN compound substrate,Al was used as source and drain electrodes.