A new kind of organically modified oxygen-sensitive membrane based on fluorescence quenching was prepared by sol-gel method,using dimthyldimethoxysilane(DDS) and tetraethoxysilane(TEOS) as the mixed precursor, Ru(phen)_3Cl_2 as the indicator.

two new types of oxygen-sensitive membrane were developed.

Photo-degradation of oxygen sensitive membrane for optical oxygen sensors;

Study on the fluorescence quenching of pyrene-doped oxygen sensitive membranes by TNT and RDX vapors

Photobleaching of oxygen sensitive membrane is the key factor to influence the photo stabilization of the fluorescence quenching based oxygen sensors.

Using silicotungstic acid and phosphomolybdic acid as active material, a medical sensitive membrane is made by applying chitosan as membranous material instead of traditional PVC.

Some molecular probes were added into the polymer and plasticizer which as a sensitive membrane used in fiber optic chemical sensor that can be measure some organic and inorganic compounds based on fluorescence quenching.

For the special characteristics,kinds of polymers are applied to pH-ISFET,mainly in four aspects,served as pH sensitive membrane,pH passive membrane,structural materials and encapsulating material.

The design of high Q and low insertion loss(IL)SAW oscillator,research of chemical sensing film and process of film are detailed expatiated.

Based on the coupled-mode theory,the complex characteristic equation of long-period fiber gratings coated with metal film and sensing film is set up.

NO gas sensitive effect of long period fiber grating coated with sensitive film;

The Rclations between output characteristics of silicon nitride sensitive film pH-ISFET andhydrolysis layer are measured.

The progresses of SAW gas sensors are described on the structure of the surface acoustic wave and the sensitive films.

On the basis of introducing the application and working principle of the sensor based on ISFET(ion sensitive field effect transistor),the development status of ISFET-sensor is reviewed, which included the sensitive layer, manufacture methods, compatibility with CMOS, integrated read out circuits, multi-sensor integration, etc.