1) Diode Laser Array
半导体激光器列阵
1.
Length′s Range While Running Different-Order Super Modes of a Diode Laser Array Phase-Locked in an External Cavity;
外腔锁相半导体激光器列阵不同阶超模运行的腔长范围
2.
Analysis on Coupling Coefficients Arising from Different Lateral Modes of Wide-aperture Diode Laser Array Phase Locked in an External Cavity;
外腔锁相宽条半导体激光器列阵侧模耦合系数分析
3.
We have deduced expressions describing couplings,arising from different lateral modes,between neighboring emitters of a diode laser array(LDA),which is positioned in an external cavity(EC),and calculated the relation between the amplitudes of coupling coefficients and the EC length.
推导了锁相外腔中半导体激光器列阵相邻发光单元之间不同阶侧模的耦合系数,计算了耦合系数的幅度与外腔长度的关系。
2) Laser diode array
半导体激光器列阵
1.
Research on the Experiments of Laser Diode Array Phase Locked in External Cavity and High-Order Lateral Modes Locking;
半导体激光器列阵外腔锁相实验及高阶侧模锁定研究
2.
Spectrum and wavelength tuning of laser diode array positioned inside an external cavity defined by a volume Bragg grating
体光栅外腔半导体激光器列阵的光谱及调谐
3) semiconductor laser arrays
半导体激光器列阵
1.
Selection of solders is of utmost importance in high-power semiconductor laser arrays and stacks assembly,because the solders participate directly in electricity conduction and heat conduction for the lasers.
在大功率半导体激光器列阵及叠阵的组装中,焊料的选择是极其关键的,因为焊料直接参与对激光器的导电、导热激光器所需的电流全部从焊料通过,而半导体激光器列阵或叠阵工作时电流是很大的,可达50A～100A。
2.
As semiconductor laser arrays and stacks are greatly applied in military field, some developed countries have laid an embargo on high-power semiconductor laser arrays and stacks and strictly guarded the confidential technique.
由于半导体激光器列阵及叠阵在军事上有很大应用，发达的资本主义国家在大功率半导体激光器线阵及叠阵方面对中国实施禁运，技术上处于绝对保密状态，因此我们必须依靠自己的力量研究。
4) semiconductor laser array
半导体激光器阵列
1.
The steady state temperature distribution of the high power semiconductor laser array is simulated using Ansys software,and the temperature changes of the in-house made semiconductor laser array is tested.
用Ansys软件模拟了大功率半导体激光器阵列的稳态温度分布,并对自行研制的半导体激光器阵列的温度变化进行了测试,结果表明理论计算与实验结果基本吻合。
5) semiconductor laser diode array
半导体激光器阵列
1.
Optical design of collimating and focusing optical system for semiconductor laser diode array;
半导体激光器阵列光束准直和聚焦系统设计
6) Laser Diode Arrays(LDA)
半导体激光器阵列
1.
In order to design the beam-shaping system of Laser Diode Arrays(LDA) and to evaluate the beam quality of LDA availably,effects of non-luminescence of Bar on beam properties of LDA were studied.
为了便于对半导体激光器阵列(LDA)光束整形系统的设计和光束质量的评价,研究了目前LDA应用时普遍存在的问题,即Bar条不发光现象对LDA光强分布等特性的影响。
2.
Based on the three-plane waveguide theory,a simplified fast axis divergence angle(FADA) model of three bars laser diode arrays(LDA) is presented.
以三层平板理论为基础,得出半导体激光器阵列(LDA)快轴方向发散角的简化模型,从该模型中可以看出,对LDA的快轴发散角的影响因素主要有:单个发光单元的波导结构(包括有源层厚度、折射率)、波长和bar间距。
补充资料：气敏半导体(见传感器半导体材料)
气敏半导体(见传感器半导体材料)
gas sensory sernieonduetor
气敏半导体gas sensory Semieonductor见传感器半导体材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条