1) SiGe technology
SiGe工艺
1.
35 μm SiGe technology,synthesis,static timing analysis and placement & routing were made.
35μm SiGe工艺库完成综合、静态时序分析、布局布线,最后在200 MHz时钟频率下通过Nanosim后仿真。
3) 0.35um SiGe BiCMOS technology
0.35um SiGe BiCMOS工艺
4) SiGeC HBT
SiGe CHBT
5) Si/SiGe
SiGe/Si
1.
Temperature Characteristics of Power Si/SiGe/Si HBT s;
功率SiGe/Si HBT的温度特性
2.
Effects of Layout Size on High-Frequency Noise Characteristics of Si/SiGe HBT s;
版图尺寸对SiGe/Si HBT高频噪声特性的影响
3.
Low-Frequency Noise Characteristics of Si/SiGe HBT s;
SiGe/Si HBT低频噪声特性研究
6) art
[英][ɑ:t] [美][ɑrt]
艺术，工艺
补充资料：采气工艺(见天然气开采工艺)
采气工艺(见天然气开采工艺)
gas production technology
，一‘J\匕乙吕天然气开采工艺pro以uetionteehnology)见
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条