1.
Growth and Characterization of Si-based Strain Relaxed SiGe Substrate and SiGe/Si Quantum Wells
Si基SiGe弛豫衬底及SiGe/Si量子阱生长与表征
2.
Preparation of SiGe Buffer Layer by Oxidation of SiGe/Si MQW Structure
氧化SiGe/Si多量子阱制备Si基SiGe弛豫衬底
3.
Study on SiGe/Si Epitaxy and SiGe HBT Microwave Monolithic Integrated Circuit;
SiGe/Si外延与SiGe HBT微波单片放大电路研究
4.
Study on the Key Techniques of SiGe/Si Heterojunction CMOS;
应变SiGe/Si异质结CMOS关键技术研究
5.
Research and Design of Two-stage High-Frequency Amplifiers Based On SiGe/Si HBTs;
基于SiGe/Si HBT的两级高频放大器的设计和研制
6.
Experimental Research on Reliability of Si/SiGe/Si Heterojunction Bipolar Transistors (HBTs) under Thermal and Electrical Stress;
热电应力下Si/SiGe/Si异质结双极晶体管（HBTs）可靠性实验研究
7.
The Simulation and Analysis of Two Kinds of Novel Structure of SiGe/Si Fast Switching Power Diode;
两种SiGe/Si快速开关功率二极管新结构的模拟与理论分析
8.
Study on Spice Modeling for Strained Si/SiGe MOSFET
基于Spice的应变Si/SiGe MOS器件模型研究
9.
Study of Si/SiGe-based p-type Resonant Tunneling Diode;
基于Si/SiGe的空穴型共振隧穿二极管的研究
10.
Epitaxy of Strain-relaxed SiGe, Ge Films and Fabrication of Ge Photodetectors on Si Substrates
Si基SiGe、Ge弛豫衬底生长及其Ge光电探测器研制
11.
SiGe Heterojunction Bipolar Transistor (SiGe HBT) Research and Design;
SiGe异质结双极晶体管（SiGe HBT）研究与设计
12.
Research of SiGe BiCMOS High-speed A/D Converter;
SiGe BiCMOS高速模数转换研究
13.
Study and Fabrication of SOI/SiGe MOS Device;
SOI/SiGe MOS器件研究和制备
14.
Design and Fabrication of Microwave Power SiGe HBT and Novel SiGe HPT Based on Virtual Substrate
微波功率SiGe HBT与基于虚衬底的SiGe HPT的研制
15.
Research on the Bonding of Si/Si and Si/GaN Using Intermediate Metal Layers;
利用金属过渡层键合Si/Si、Si/GaN的研究
16.
10Gb/s GaAs/SiGe Laser Diode Driver IC;
10Gb/s GaAs/SiGe激光驱动器设计
17.
Characteristics Research of Ultra-Deep-Submicron SOI SiGe MOSFETs;
超深亚微米SiGe SOI MOSFETs的特性研究
18.
SiGe Waveguide Resonant-cavity-enhanced Photodetector;
SiGe波导共振腔增强型光电探测器