1) MOS-only
纯MOS结构
1.
A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs.
提出了一种新的纯MOS结构的基准电压源,它利用pMOS和nMOS的阈值电压差来抵消工艺偏差,提高了基准的精度。
2) MOS Structure
MOS结构
1.
The influence of catalyzing metal thin films on MEMS ammonia-sensitive sensor with a MOS structure;
催化金属薄膜对MOS结构MEMS氨敏传感器性能的影响
2.
A model considering the ionizing radiation effects in MOS structure
MOS结构电离辐射效应模型研究
3.
For the sake of researching of radiation effect of MOS structure irradiated by electron,we adopted 0.
为了研究MOS结构的电子辐照效应,采取了能量为0。
3) SiC MOS structure
SiC MOS结构
1.
The radiation response and electric characteristics of 6H-SiC MOS structure are studied with experiment.
对SiC MOS结构辐照引起的电参数退化及其电特性进行了研究。
4) MOS-HBT cascode
MOS-HBT结构
5) buried-channel MOS structure
埋沟MOS结构
1.
The distortion of the C-V characteristics of a SiC buried-channel MOS structure is presented.
隐埋沟道MOSFET中存在一个pn结,在沟道夹断以后,半导体表面耗尽区和pn结耗尽区连在一起,这时总的表面电容是半导体表面耗尽区电容和pn结电容的串联,使埋沟MOS结构的C-V特性发生畸变。
6) mos wafer
mos结构薄片
补充资料：MOS 结构
见金属-氧化物-半导体结构。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条