1) base resistor cancellation
基区电阻消除
2) base resistance
基区电阻
1.
Testing base resistance r_(bb) of transistor;
晶体管基区电阻r_(bb)的测试
2.
Including a base resistance model dependent of temperature,optimuni design of the base of hish-spoed bipolar transistors at low temperatures is investigated.
本文考虑禁带变窄效应和载流子冻析效应，分析了基区掺杂浓度的分布、基区峰值浓度的大小及位置对基区渡越时间的影响，结合基区电阻的温度模型，对低温高速双极晶体管的优化设计作了探讨。
3) Base current cancellation
基极电流消除
4) deadband eliminating
消除死区
5) dissipate the erroneous understanding
消除误区
6) base serial resistance
基区串联电阻
1.
With the novel modulated doping QW base and buried metal self-align process, the base lateral resistance and contact resistance of ultra-thin-base small-size SiGe HBTs are decreased by 42% and 55% respectively, which provides an effective method of resolution on base serial resistance.
采用新型调制掺杂量子阱基区结构和掩埋金属自对准工艺方法,在器件的纵向结构和制备手段上同时进行改进,使超薄基区小尺寸SiGeHBT的基区横向电阻和接触电阻分别降低42%和55%以上,有效解决了基区串联电阻的问题。
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条