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1)  etch factor
蚀刻因子
1.
This paper aims at the problem of some different etch factor’s calculational method in the PCB industry , via a series of trial and the analysis of Microsection , some opinion of calculational method was brought forword .
文章针对业内不同蚀刻因子的计算方法做了较详尽的分析,并结合试验验证进而提出对蚀刻因子计算方法的一点看法,对于蚀刻因子的正确运用有一定的参考价值。
2)  ion etching
离子刻蚀
1.
The distribution of C, O, N, Cl elements in ternary polyurethane/epoxy/poly-B-propylene glycol diacrylate(PUR/EP/PPGDA) IPNs' surface was analyzed by X-ray photoelectron spectroscopy and the internality was analyzed with argon ion etching.
用X射线光电子能谱(XPS)分析了以聚氨酯(PUR)为第一网络的PUR/环氧树酯/聚-β-丙二醇二丙烯酸酯互穿聚合物网络(PUD/EP/PPGDA IPN)弹性体的表面元素分布,并用氩离子刻蚀进行材料内部元素分析。
2.
In order to make high quality junctions we have done some researches on reaction ion etching(RIE) method and ion etching method.
在制备所有的NbN超导隧道结的过程中,为了得到良好的隧道结,刻蚀是很关键的一步,我们对反应离子刻蚀(RIE)和离子刻蚀两种不同的方法进行了研究比较。
3.
This paper applies the thermal spikes effect and ion etching effect to explain the formation of DLC films by analyzing the effects of energy particles.
本文通过分析荷能离子的作用,应用热峰效应和离子刻蚀效应来解释DLC膜的形
3)  Ion etching
离子蚀刻
1.
The speed of etching the sample was determined by controling the size ofion beam and voltage of two pole of ion beam,By the technigue of ion etching,themicroshape of the mite leg and the mite boby of the Tetranychus truncatus Ehara wasclearly displayed under Scaning Electronic Microscope(SEM).
本文以截形叶螨为实验样品,经离子蚀刻后在扫描电镜下观察,清晰地显示了螨足、螨体解剖后的显微结构。
4)  Ion etch
离子刻蚀
1.
The theory of ion etching and the parameter of ion source designing are discussed in detail.
并且详细论述离子刻蚀的原理以及离子源的参数设计。
5)  atom-lithography
原子刻蚀
6)  ion beam etching
离子束刻蚀
1.
Influence of fabrication error in ion beam etching on diffractive optical element;
离子束刻蚀工艺误差对DOE器件的影响
2.
Fresnel lens fabricated by ion beam etching;
离子束刻蚀法制作菲涅耳透镜
3.
An Ion beam etching facility,model KZ-400 has been successfully designed and constructed to fabricate large-aperture(400 mm×400 mm) optical diffraction components.
日前我室为制作大口径(400 mm×400 mm)衍射光学元件需要,成功研制了一台KZ-400离子束刻蚀装置。
补充资料:蚀刻因子
分子式:
CAS号:

性质:在蚀刻型金属引线框架的生产过程中,蚀刻深度与横向蚀刻之比。

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