1) well width
阱宽
1.
The relations between the ground state energies of electronic and Al concentration,well width and hydrostatic pressure are given.
对GaAs/ALxGa1-xAs量子阱系统中电子的基态能进行了数值计算,给出基态能随铝组份,阱宽和压力的变化关系。
2.
The Kronig-Peney model is applied to calculate the relationship between the vitiation of the composition and well width in InGaAsP multiple quantum wells.
采用有效质量框架下一维有限深势阱模型对InGaAsP多量子阱的组分和阱宽之间的关系进行了计算,利用更符合实验结果的Harrison模型来计算带阶,分别就晶格匹配和应变补偿两种情况进行了比较计算,最后根据要制作的全光功能开关的性能指标对计算结果进行了选择,得到最适合于制作光开关的材料。
2) random well widths
阱宽无序
3) channel thickness
量子阱宽
1.
52AlAs high electron mobility transistor(HEMT)structures with different channel thickness of 10—35 nm have been investigated in magnetic fields up to 13 T at 1.
4K下不同量子阱宽度(10-35nm)的InP基高电子迁移率晶体管材料的二维电子气特性。
4) the width of potential well
势阱宽度
5) non-uniform well-thickness
非均匀阱宽
1.
InGaAs/AlGaAs non-uniform well-thickness multi-quantum well superluminescent diodes were designed and successfully fabricated,the output properties of light power and spectrum were measured and analyzed.
采用阳极氧化方法和MBE生长技术进行了非均匀阱宽InGaAs/AlGaAs多量子阱超辐射发光管器件的设计和工艺制作,研究了三种条形结构器件的功率输出和光谱输出特性。
6) quantum well width
量子阱宽度
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条