1) ZnSeTe/ZnTe multiple quantum wells
ZnSeTe/ZnTe多量子阱
2) ZnSe-ZnTe MQWs
ZnSe-ZnTe多量子阱
3) ZnCdTe-ZnTe quantum wells
ZnCdTe-ZnTe量子阱
1.
ZnCdTe-ZnTe quantum wells (QWs) have been grown on Si (100) substrates in a horizontal-type low-pressure metalorganic chemical vapor deposition (MOCVD) system.
在本文中,我们用低压有机金属化学气相沉积(MOCVD)方法在ZnO 覆盖Si(100)衬底上外延生长了ZnCdTe-ZnTe量子阱结构,并与直接在Si(100)衬底上生长的同一结构进行了比较,通过对它们表面形貌及发光光谱的比较,我们发现,有ZnO 覆盖层时,外延层的表面裂纹消失,并且发光效率明显提高。
4) Cd x Zn 1-x Te/ZnTe MQW
Cd_xZn_(1-x)Te/ZnTe多量子阱
5) Multiple Quantum wells
多量子阱
1.
Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering;
反应磁控溅射ZnO/MgO多量子阱的光致荧光光谱分析
2.
GaAs/AlGaAs(110)multiple quantum wells(MQWs)were grown by solid source molecular beam epitaxy(MBE)with a valved arsenic cracker cell.
采用固态源分子束外延的方法在GaAs(110)取向衬底上生长了GaAs/Al GaAs多量子阱结构。
3.
The DR spectra of GaAs/Al 0 25 Ga 0 75 As multiple quantum wells (MQWs) samples were measured experimentally.
利用振动光束差分反射测试系统 ,获得了 Ga As/Al Ga As多量子阱材料的 DR谱 ,初步分析了 DR信号的产生机制 。
6) multi-quantum well
多量子阱
1.
Analyzing the unstable reason of GaN-based blue light LED peak wavelength,it was the quantum restrictionStark effect caused by the multi-quantum well area.
分析了引起GaN基蓝光LED峰值波长不稳定的原因,它是由多量子阱区内极化效应引起的量子限制斯塔克效应造成的。
2.
To verify the direct-gap transition of a SiGe multi-quantum well and grope for its application in thermophotovoltaic cells,a high quality SiGe multi-quantum well is grown by our UHV-CVDⅡ system.
为了验证SiGe多量子阱的能带向直接带隙结构转变[1]和进一步探索其在热光电池领域的应用,采用先进的超高真空化学气相沉积系统生长出高质量的SiGe多量子阱外延层,并对其进行多次反射红外线吸收谱的测量。
3.
Based on the logarithmic relation of gain on carrier density,the rate equations are described for multi-quantum well of vertical cavity surface emitting lasers(VCSELs) taking into account the influence of nonradiative depopulation rate.
采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSEL)的速率方程。
补充资料：多量子阱(见量子阱)
多量子阱(见量子阱)
multiple quantum well
多t子阱multiple quanturn well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条