1) bandgap depth
禁带深度
2) depth of potential
囚禁深度
3) band gap
禁带宽度
1.
Measuring the band gap of silicon using silicon photocells;
利用硅光电池测量硅单晶半导体材料的禁带宽度
2.
It also showed that the optical absorption edge of the annealed film appeared shifted towards the longer wavelength side and the band gap decreased by 0.
光学性质显示退火处理的薄膜吸收边缘明显的向长波的方向移动,发生红移现象,而且禁带宽度减少了0。
3.
Based on the simulation, the best band gap and the optimal thickness of each junction were carried out.
本文对a Si∶H叠层薄膜太阳电池进行了计算机模拟,提出各层电池的禁带宽度最佳匹配以及各层电池本征层的最佳厚度的设计方案。
4) Bandgap
['bændɡæp]
禁带宽度
1.
Relationship Between Intrinsic Breakdown Field and Bandgap of Materials;
本征击穿电场与禁带宽度的关系
2.
Determined the bandgap of ncSi using a heterojunction CV;
电容-电压法测定纳米硅的禁带宽度
3.
Determination of bandgap in SiGe strained layers using a pn heterojunction C-V;
pn结电容-电压法测量应变SiGe禁带宽度
5) band-gap
禁带宽度
1.
The band-gaps of BN(n,0) nanotubes also increase with the increase of n and converge at 5.
BN(n ,0 )纳米管的禁带宽度随着n的增大而增大 ,并收敛于 5 。
2.
The transmission spectra of ZnS films were measured,optical constants and band-gap of ZnS films were obtained.
利用薄膜分析系统测量不同沉积时间制备的ZnS薄膜透射谱,通过分析薄膜透射谱,来确定ZnS薄膜光学常数和禁带宽度。
6) energy gap
禁带宽度
1.
Hence,the energy gap E .
根据 Aspnes的“三点法”,由谱图计算出了γ-Mn O2 的禁带宽度 ;并根据γ- Mn O2 膜电极的 EMRS随直流偏置电位的变化 ,确定出其在 1mol·L- 1 NH4Cl溶液中的平带电位值 。
2.
The threshold voltage and the voltage correlated with the energy gap of LEDs were measured.
通过测量各发光二极管的正向伏安特性以及光谱特性,确定发光二极管的阈值电压和其禁带宽度所对应的电压。
3.
The internal microstrain, lattice distortion, absorption coefficient and energy gap decrease with the grain size increasing.
FeS2晶粒尺寸的变化造成了晶体面缺陷密度的变化,可引起微观内应力水平、缺陷能级分布和晶界势垒高度的变化,进而使得薄膜的微应变、点阵畸变度、光吸收系数及禁带宽度等物理特性随晶粒尺寸的增加而降低。
补充资料：宽禁带半导体(见半导体的能带结构)
宽禁带半导体(见半导体的能带结构)
wide gap semiconductor
习一’平叼能带结构。‘J~正J“、二二，，Conauctor见半
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条