1) transmission coefficient
隧穿系数
1.
The effects of strain on the transmission coefficient were studied for quantum-well structures.
研究了应变对量子阱结构的遂穿电流的影响,考虑应变对介电常数、有效质量,晶格常量等物理量的影响,由变分法计算了AlGaAs/GaAS应变量子阱的隧穿系数随外加应变变化。
2) Electron tunneling constailt
电子隧穿系数
3) tunneling
[英]['tʌnəlɪŋ] [美]['tʌnəlɪŋ]
隧穿
1.
Resonant tunneling of acoustic waves in 1D phononic crystal;
声波在一维声子晶体中共振隧穿的研究
2.
Quantum Magnetic-tunneling Through a CaAs/Ga_(1-x)Al_xAs Superlattices:a Calculation of the Transmission Coefficient;
GaAs／Ga_（1－x）Al_xAs超晶格结构中量子磁隧穿传输系数的计算
3.
Influence of electron-phonon interaction on single electron tunneling in a quantum dot molecule;
电声子相互作用对量子点分子中单电子隧穿的影响
4) Tunnel
[英]['tʌnl] [美]['tʌnḷ]
隧穿
1.
The current voltage characterization of a standard double barrier tunneling junctions(DBTJ) which forms room temperature single electron devices is computed by means of time dependent Schrdinger equation.
对形成室温单电子现象的典型串联双隧道结结构模型 ,利用含时薛定谔方程的求解 ,计算了其隧穿电流与偏压的关系 。
2.
In this letter, the current-voltage characteriazation of a standard tunneling junctions which forms room temperature single electron devices is computed by the solution of Schrodinger equation using WKB method.
本文对形成室温单电子现象的典型隧道结结构模型利用 WKB方法求解薛定谔方程计算其隧穿电流与偏压的关系。
3.
In this letter,the current voltage characteristic of a standard double barrier tunneling junctions (DBTJ),which forms room temperature single electron devices,is computed by solving the time dependent Schr[AKo¨D]dinger equation.
对形成室温单电子器件的典型串联双隧道结结构模型利用求解含时薛定谔方程计算了其隧穿电流与偏压的关系 。
5) coefficient of pressure transmission
穿室系数
1.
The relationship between the length of the tunnel and the coefficient of pressure transmission;
管道长度与阻抗式调压室水击穿室系数的关系分析
6) coefficient of puncture
击穿系数
1.
In this paper,three calculating forms on Q value are given respectively by coefficient of restitution,coefficient of puncture and exoergic coefficient.
该文用恢复系数、击穿系数和放能系数分别给出了3种Q值计算公式。
补充资料：隧穿效应
分子式：
CAS号：
性质：见隧道效应。
CAS号：
性质：见隧道效应。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条