1) Square resistance measurement
方块电阻测量
2) in situ sheet resistance
原位方块电阻测量
3) sheet resistance
方块电阻
1.
Kinetics of the oxidation process of the copper films in the thickness range of 16～22 nm at 140 ℃ was studied by using transmission spectrum and sheet resistance methods.
采用方块电阻和透射光谱两种方法为表征手段,测量16～22nm范围内不同厚度Cu薄膜在140℃下完全氧化所需要的时间,得到了Cu薄膜氧化反应的动力学曲线,并利用X射线衍射(XRD)分析了氧化产物的晶相结构和成分。
2.
The sheet resistances and reflectivity of ultra-thin aluminum and nickel films were measured when they were applied to foam with different thickness.
测量了Al,Ni薄膜的方块电阻及其用于不同厚度泡沫结构的平板反射率,实验结果表明:超薄金属膜结构可以实现谐振吸收;吸波性能由介质材料和金属薄膜共同决定。
3.
Then,the effects of heat treatment and temperature on the chemical composition and sheet resistance of the prepared films were investigated by XRD,EDXS and sheet resistance measurements.
利用X射线衍射和能量散射X射线能谱表征方法,并结合薄膜方块电阻的测定,探讨了热处理方式和热处理温度对薄膜化学组成及薄膜电阻的影响。
4) block resistance
方块电阻
1.
The first is definition of ITO; the second is definition of block resistance; the third is precise calculation of ITO resistance, and the fourth, analyzing the factors affecting the ITO resistance.
论述了ITO、方块电阻的定义及ITO阻值的精确计算 ,并结合实际应用讨论了影响ITO阻值的因素 ,对版图设计和LCD生产的过程控制有一定的借鉴意义。
5) square resistance
方块电阻
1.
2 order change on square resistance from 60℃ to 85℃.
将制备好的金属钒薄膜置于440℃空气下氧化处理,获得相变温度为60℃的单斜VO2薄膜,薄膜方块电阻值在60～85℃范围内变化量达2。
2.
Analyzing the problems which often happen in the portable square resistance meter for the thin films on ITO glass surface,some solutions were proposed and carried out by tests.
针对手提式薄膜方块电阻测试仪在使用中容易出现的问题,进行分析研究,提出了解决方案,并在实验中得到实现。
3.
The electro-magnetic shielding effectiveness of the plated Cu layer reaches 25-40 dB and the square resistance is up to about 0.
施镀时间在10～15min之间时,镀铜层的电磁屏蔽效能可达25～40dB,方块电阻达到0。
6) resistance measurement
电阻测量
1.
A method of resistance measurement based on negative feedback is proposed in this paper.
提出一种反馈分压式电阻测量方法 ,给出了两种改进方案 ,分析了它们的测量误差 ,指出了减小误差的途径和方
2.
The design of hardware/software of a resistance measurement instrument Consisting of AT89C2051 MPU and TLC1549 10 bit serial A/D chip is described.
介绍一种由ＡＴ８９Ｃ２０５１单片机和ＴＬＣ１５４９１０位串行Ａ／Ｄ芯片构成的电阻测量仪表的硬件与软件设计。
3.
This paper gives a new method of resistance measurement.
本文在伏安法测电阻的基础上 ,提出了一种新的电阻测量方法 ,通过引入一个已知电阻 ,采用组合方法求出较为准确的待测电阻
补充资料：方块电阻
分子式：
CAS号：
性质：在长和宽相等的样品上测量的真空金属化镀膜的电阻。方块电阻的大小与样品尺寸无关。
CAS号：
性质：在长和宽相等的样品上测量的真空金属化镀膜的电阻。方块电阻的大小与样品尺寸无关。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条