1) Non-doping
非掺杂型
1.
Preparation and Electroluminescence Property of a Non-doping OLED Based on Zn(Q-Ph)_2 and DCJTB;
基于Zn(Q-Ph)_2与DCJTB非掺杂型OLED的制备及其电致发光性能研究
2) non-doped
非掺杂
1.
High-efficient non-doped type white organic light-emitting devices;
高效率非掺杂型白色有机电致发光器件
2.
Studies on Non-doped-type White Organic Light Emitting Devices;
非掺杂型白色有机电致发光器件的研究
3) p-doping
p型掺杂
1.
This article gives a description of the progress in self-com-pensation model for p-doping, the codoping process and mechanism, PL .
使用金属有机物化学气相沉积(MOCVD)方法已经获得实用性的p型掺杂,但是其电学和光学特性都不能让人满意。
2.
This paper was overviewed the basic properties of GaN-based material,analyzed key technologies in making blue GaN-based LEDs,such as MOVPE,P-doping ohmic contact,etching and chip dicing saw,and introduced recent progresses of technologies at present.
本文首先综述了GaN基材料的基本特性,分析了GaN基蓝光LED制程的关键技术如金属有机物气相外延,P型掺杂,欧姆接触,刻蚀工艺,芯片切割技术,介绍了目前各项技术的工艺现状,最后指出了需要改进的问题,展望了末来的研究方向。
3.
In the case of no determination of Al composition and p-doping density in MOCVD epitaxy of AlGaInP double heterostructure light emitting diodes,the relation of Al composition and luminescent efficiency is gotten under various p-doping density by analyzing carrier transportion in double heterojunction of LED,and the principle of doping density and Al composition vs.
在AlGaInP四元系双异质结发光二极管 (DH LED)的材料生长过程中 ,限制层的Al组分与p型掺杂浓度的确定有较大的随意性 ,这对LED的发光不利。
4) p-type doping
P型掺杂
1.
Photoluminescence mechanisms,p-type doping,p-n junction and diluted magnetic property of ZnO-based semiconductor thin film are discussed in detail.
详细探讨了ZnO薄膜材料的发光机理、P型掺杂、p-n结的生长和稀磁性能,并对国内外的发展情况和存在问题进行了分析和探讨。
2.
ZnO film is the third generation semiconductor functional material) whose high quality p-type doping is the key for developing optoelectronic devices.
ZnO薄膜作为第三代半导体功能材料,高质量的p型掺杂是基于光电器件应用的关键。
3.
In order to fabricate such optoelectronic devices, the key problem of p-type doping should be resolved.
为了开发ZnO短波长光电器件,首要解决的 关键问题是氧化锌的p型掺杂。
5) n-type doping
n型掺杂
1.
In this paper we mainly study preparation, properties and n-type doping of cubic boron nitride thin films.
本文主要研究立方氮化硼的制备、性质和n型掺杂等内容。
2.
In this paper, the mechanisms of the reaction about N-type doping polysilicon which take PCl_3/H_2 as phosphor source were investigated theoretically for the first time with Gaussian98 program at B3LYP/6-311G** level.
本文分别研究了PCl_3/H_2在气相中和在硅衬底表面上的微观反应机理,以期为半导体N型掺杂技术提供必要的理论依据。
6) box-shaped profile
箱型掺杂
补充资料：非甲非乙型病毒性肝炎
非甲非乙型病毒性肝炎
病名。病毒性肝炎类型之一。详见该条。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条