1) nonvolatile floating-gate memory
非易失浮栅存储器
1.
Charge storage characteristics of nonvolatile floating-gate memory based on gradual Ge1-xSix/Si hetero-nanocrystals have been fabricated and investigated through capacitance-voltage(C-V)and capacitance-time(C-t)measurements.
测试结果表明,该异质纳米晶非易失浮栅存储器具有良好的空穴存储特性,这是由于渐变锗硅异质纳米晶中Ge的价带高于Si的价带形成了复合势垒,空穴有效地存储在复合势垒的Ge的一侧。
2) non-volatile memory
非易失性存储器
1.
The Study of Non-Volatile Memory Based on Standard CMOS Process;
基于标准CMOS工艺的非易失性存储器的研究
2.
However, the complexity of the process prevents the traditional non-volatile memory from being embedded in the standard CMOS circuits, resulting from the fact that memories of this kind needs multi-layer polysilicon, different gate oxide thicknesses and the adjustment of different doping concentrations.
在ASIC电路设计中,经常会需要一些低成本低密度的非易失性存储器件,但是工艺的复杂性阻碍了传统的非易失性存储器件嵌入到标准CMOS电路中,这是由于传统的非易失性存储器需要多层多晶硅,不同的栅氧化层厚度,以及需要调整不同的掺杂浓度等等,都增加了工艺的成本和复杂性。
3) nonvolatile memorizer
非易失存储器
1.
The data lossing causes of nonvolatile memorizer(NVM) AT24C64 was when the system power put on or off,the CPU will output a sequence of noisy pulses may combine into a writing command of AT24C64,and start a writing cycle.
在应用非易失存储器AT24C64过程中,发现丢失数据的原因是由于CPU在上电与断电过程中,欠电压导致CPU失控,输出端口产生无数个干扰脉冲,干扰脉冲的组合生成了AT24C64的有效写命令,于是破坏了AT24C64的数据。
4) nonvolatile memory
非易失性存储器
1.
The design method of nonvolatile memory based on intelligent controller of circuit breaker was researched.
研究了断路器智能控制器的非易失性存储器的设计方法。
5) nonvolatile floating gate memory
非挥发浮栅存储器
1.
The chemical methods of Langmuir-Blodgett(LB) film and reverse microemulsion were successfully applied in the fabrication process of nonvolatile floating gate memory.
将Langmuir-Blodgett(LB)膜等化学方法应用于非挥发浮栅存储器制备工艺中。
补充资料：随机存取存储器(见半导体存储器)
随机存取存储器(见半导体存储器)
random access memory,RAM
s日1}}Cunq日Ct旧choql随机存取存储器random aeeess memoryRAM)见半导体存储器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条