1) nano-crystal floating gate memory
纳米浮栅存储器
2) nano-memory
纳米存储器
1.
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
3) nanostorage
纳米存储
1.
As a fundamentally new type of storage systems based on the organic molecular,the nanostorage has a growing trend to substitute semiconductor storage devices applied widely at present.
以有机分子为基础的"纳米存储"是一种新型的数据存储系统,具有替代目前广泛应用的半导体存储器件的趋势。
4) nanocrystal floating-gate
纳米晶浮栅
5) nonvolatile floating gate memory
非挥发浮栅存储器
1.
The chemical methods of Langmuir-Blodgett(LB) film and reverse microemulsion were successfully applied in the fabrication process of nonvolatile floating gate memory.
将Langmuir-Blodgett(LB)膜等化学方法应用于非挥发浮栅存储器制备工艺中。
6) nonvolatile floating-gate memory
非易失浮栅存储器
1.
Charge storage characteristics of nonvolatile floating-gate memory based on gradual Ge1-xSix/Si hetero-nanocrystals have been fabricated and investigated through capacitance-voltage(C-V)and capacitance-time(C-t)measurements.
测试结果表明,该异质纳米晶非易失浮栅存储器具有良好的空穴存储特性,这是由于渐变锗硅异质纳米晶中Ge的价带高于Si的价带形成了复合势垒,空穴有效地存储在复合势垒的Ge的一侧。
补充资料：随机存取存储器(见半导体存储器)
随机存取存储器(见半导体存储器)
random access memory,RAM
s日1}}Cunq日Ct旧choql随机存取存储器random aeeess memoryRAM)见半导体存储器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条