1) internal field ring
内场限环
1.
During the simulation process,we use the single internal field ring and field plate to reduce the peak voltage which may appear on the edge of gate field plate and the drain area,and also analyze the relations of the breakdown voltage to the position and concentration of the internal field ring and so on.
在模拟过程中,综合考虑了内场限环和场极板技术来弱化表面栅场板边缘和漏端的峰值电场,分析了场限环的长度,注入剂量等参数对耐压的影响。
2) floating field limiting ring
场限环
1.
A new analytical model for predicting the distribution of the ring voltage, edge peak field and optimal spacing of the planar junction with a single floating field limiting ring structure is presented, based on the cylindrical symmetric solution and the critical field concept.
采用与平面结物理机理最接近的圆柱坐标对称解进行分析 ,提出了平面结场限环结构的电压分布和边界峰值电场的解析理论。
2.
BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,based on the cylindrical symmetric solution and the critical field concept.
提出了一个新的二维解析方法预言场限环结构的电压分布和边界峰值电场及环间距优化 。
3) field limiting ring
场限环
1.
The blocking capability of planar power electronic devices is analyzed using junction termination structure with field limiting ring and the P +I(N -)N + structure of supporting bulk breakdown voltage.
利用场限环终端结构及 P+I( N- ) N+体耐压结构分析了平面型电力电子器件的阻断能力。
2.
Field plates and field limiting rings are usually used as junction termination techniques for high-voltage power MOSFET.
场板与场限环是用来提高功率MOSFET抗电压击穿能力的常用结终端保护技术,文章将分别介绍场板与场限环结终端保护技术各自的特点和耐压敏感参数,通过场板和场限环的互补组合来优化设计一款高耐压的VDMOS器件结构,最后采用ATHENA(工艺模拟)和ATLAS(器件模拟)工具来仿真验证优化设计的结果。
3.
In order to increase thetaken voltage of VDMOS,the terminal technology is adopted including the field limiting ring and the field plate which are freefrom the process added .
本文基于BCD工艺,提出了高压器件VDMOS的结构,采用了不附加工艺的场板和场限环两种终端结构提高器件耐压,并利用器件模拟软件MEDICI进行了仿真验证,得到了优化的器件结构参数。
4) Field limiting ring
场限环(FLR)
5) limiting field ring
限场环
6) Field Limitting Ring
场限制环
1.
The Safety Design Rule of Field Limitting Ring;
场限制环的安全环距设计原理
补充资料：(Z,Z)-聚环氧乙烷聚甲基环氧乙烷双油酸酯
CAS：67167-17-3
中文名称：(Z,Z)-聚环氧乙烷聚甲基环氧乙烷双油酸酯
英文名称：methyl-, polymer with oxirane, di-9-octadecenoate, (Z,Z)-Oxirane
Poly(propylene oxide, ethylene oxide), diester with oleic acid
中文名称：(Z,Z)-聚环氧乙烷聚甲基环氧乙烷双油酸酯
英文名称：methyl-, polymer with oxirane, di-9-octadecenoate, (Z,Z)-Oxirane
Poly(propylene oxide, ethylene oxide), diester with oleic acid
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条