1) leakage
漏流
1.
As feature size shrinks and the frequency increases,on-chip L2 cache with large capability is the main source of leakage power in micro-processors.
随着工艺尺寸缩小和处理器频率的提高,大容量的片上L2 cache成为处理器漏流功耗的主要来源。
2) Short circuit leakage
短路漏流
3) leaking quantity
漏流量
1.
To find out the best flight structure of an inter-meshing counter-rotating twin-screw extruder, which will greatly reduce the leaking quantity and improve productivity, based on the mathematical model of leaking quantity, programmed with Matlab and shown by ployfit function, this paper studied the relationship between leaking quantity and pressure difference.
为得出内啮合异向双螺杆挤出机漏流量较小的螺棱厚度结构,提高生产率,以3种厚度类型的螺棱结构为基础,根据漏流量的数学模型,以Matlab语言编程,通过ployfit函数绘制漏流特性图研究得出3种情况下漏流量与压差之间的关系。
4) leaching loss
渗漏流失
1.
65 kg·hm~(-2) respectively, and (NO~-_3-N) was the main form of nitrogen leaching losses from dry farming fields.
通过测坑和大田小区试验,研究了上海郊区旱作农田氮素降雨径流和降雨渗漏流失的特征、相关因素和流失负荷。
5) leakage
渗漏流失
1.
The characters of N-element leakage and countermeasures in rice fields in Shanghai suburb;
上海郊区水稻田氮素渗漏流失特性及控制对策
2.
Through the leaching-pond experiment,the rule of leakage-loss of nitrogen and controlling countermeasures in rice fields in the upstream area of HuangPu River watershed were studied.
通过测坑定位试验,对上海市黄浦江上游水稻田氮素渗漏流失规律及其控制对策进行了研究,得到如下结论:(1)稻田氮素渗漏流失以NO3--N为主,施肥后1~2 d渗漏水中NH4+-N浓度较高,之后一般为0。
6) leakage flow
泄漏流
1.
The tip leakage flow and flow separation near hub in both time-averaged flowfield and instantaneous flowfield were analyzed.
本文运用分离涡模拟(DES)方法研究了不同工况下压气机亚音转子的流动情况,分析了其时均与瞬时流场中顶部间隙泄漏流动和根部角区的流动分离。
2.
As the reaction of leakage flow,static pressure troughs formed in the outer wall case are enlarged with the increase of clearance and backpressure.
结果表明:适当小的叶尖间隙可以使转子获得较好的性能;作为泄漏流的反应,外壁机匣上所形成的静压槽随着间隙的增大、反压的提高而扩大;在不同叶尖间隙下,叶尖附面层和泄漏涡的破裂对风扇转子的失速起不同作用。
3.
From the plot of three-dimensional velocity, the tip leakage flow can be clearly (investigated.
根据所测量得到的三维速度,清楚地展现了转子顶部流动的特性,特别是泄漏流对顶部流动的影响。
参考词条
补充资料：反向漏电流（inverseleakagecurrent）
反向漏电流（inverseleakagecurrent）
流过处于反向工作的pn结的微小电流称为反向漏电流。理想pn结反向漏电流中还包括体内扩散电流与空间电荷区产生电流两部分，硅pn结空间电荷区产生电流起支配作用。反向漏电流的大小与组成pn结的半导体材料禁带宽度呈指数关系，反向漏电流中还包括表面漏电流，表面漏电流的大小与pn结制作工艺密切相关。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。