1) bandgap reference
带隙参考源
1.
A high-order temperature compensated bandgap reference(BGR) based on CSMC 0.
5-μm2P3Mn-阱混合信号CMOS工艺的高阶温度补偿的带隙参考源。
2.
Basing on current mode bandgap topology structure,a bandgap reference capable of operating at a low voltage down to 1V,which is implemented in 0.
基于CMOS电流模式,设计一个可以工作在1V电源电压的低电压带隙参考源。
2) bandgap reference(BGR)
带隙参考电路(BGR)
4) Reference band
参考带
5) RCC Reference Bandwidth
参考带宽
6) reference source
参考源
1.
Considering the particularity of single channel FVEP signal extraction,the reference source was introduced to satisfy the applying conditions of ICA,then the single channel FVEP signal and background EEG noise were separated preliminarily;and the SNR of FVEP signal were improved by taking advantage of assembly average method;finally FVEP signal was extracted efficien.
考虑单通道FVEP信号提取的特殊性,引入了参考源通道以满足独立分量分析的应用条件,从而实现单通道FVEP信号与背景EEG噪声的分离;考虑参考源通道与实际检测中的背景噪声不完全匹配而可能带来的消噪效果不理想的问题,利用叠加平均技术与叠加次数的平方根成正比的特性,通过少次的叠加来进一步提高单通道FVEP信号的信噪比;最后利用多分辨率小波变换的多分辨率特性,实现FVEP信号的有效提取。
补充资料：间接带隙(见半导体的能带结构)
间接带隙(见半导体的能带结构)
indirect band gap
I’ed接带隙indireet band gap见半导体的能带结构。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条