Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density;

Simulations with a resistive load circuit for power loss comparison at high frequency application are performed with 20V-rated power switching devices,including a BTB-JFET,a trench MOSFET(T-MOSFET)generally applied in present industry,and a conventional trench-gate bipolar-mode JFET(TB-JFET)without buried oxide,for the first time.

In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides with two different doses,2×10 15 and 3×10 15 cm -2 ,respectively.

The comparison study was made between two different structure landfill methods under the same hydraulic loading condition, the result shows the phenomenon of ammoniac nitrogen accumulation occurs in traditional anaerobic landfill even if in later period,but the ammoniac nitrogen may be removed completely in semi-aerobic landfill.

Pilot-scale experiment of semi-aerobic landfill on the Qinghai-Tibet plateau;

Temperature variation in semi-aerobic landfilling of municipal solid waste;

Determination of oxygen consuming radius in semi-aerobic landfilling structure;

This paper through anaerobic and aerobic contrasting experiments, elicits that organics degradation rate in aerobic landfill is better than in anaerobic landfill.

Experiments show that total dose radiation effect in buried oxide of SOI(Silicon on Insulator) MOS is obviously dependent on bias condition.

And next,MEDICI simulation and a numerical model are utilized to simulate the electric field inside the buried oxide and fraction of hole capture,respectively.