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1)  buried oxide fixed charge
埋氧层固定电荷
1.
A novel SOI high voltage device with step buried oxide fixed charges(SBOC) is proposed and the breakdown model based on the 2-D Poisson equation is developed.
提出了具有阶梯分布埋氧层固定电荷 (SBOC) SOI新型高压器件 ,并借助求解多区二维泊松方程建立其击穿电压模型 ,对阶梯数 n从 0到∞时的器件击穿特性进行了研究 。
2)  Fixed oxide charge
氧化层固定电荷
3)  positive fixed oxide charges
氧化层固定正电荷
4)  fixed oxide positive charge
氧化层正固定电荷
5)  fixed negative charges
固定负电荷
1.
To make good use the high energy of solar energy, AlxGa1-xAs was designed to be a added wok layer, and fixed negative charges were introduced on the interface of MIp-AlxGa1-xAs, and the induced potential on interface was established as well, which would result in the formation of MIp+-AlGaAs induced junction and effective diminishment of interface recombination.
为充分利用太阳光的短波部分,将AlxGa1-xAs设计为电池的又一个光伏工作层,并引入固定负电荷,建立界面感应势垒,形成MIp+-AlGaAs感应结,有效降低界面对光生电子的复合。
2.
By introducing fixed negative charges on the surface of insulation layer of MIp Al x Ga 1 x As which were covered by anti reflection coating, the holes in p Al x Ga 1 x As layer were induced to interface, and the induced potential of electrons on interface was established.
在MIp AlxGa1 xAs结构的I层表面上 ,引入固定负电荷 ,并用减反射膜覆盖 ,将p Al1 xGaxAs层中的空穴感应至界面 ,可建立界面电子感应势垒 ,并将其构成MIp AlxGa1 xAs/p n n+ GaAs太阳电池。
3.
And it was creative to introducing fixed negative charges to change the shape of the band and to establish an induced potential which would prevent the photo-generated electrons from moving to interface, so as to dropping the interface recombination velocity.
7)As为工作层,并作为能带工程的首次成功尝试,创新性引入固定负电荷,改变能带形状,形成阻挡光生电子向界面运动的感应势垒,有效降低复合速度。
6)  fixed positive charges
固定正电荷
1.
In this paper,based on the solar grade silicon MOS,MNS and MNOS systems have been analysed and the interface states,fixed positive charges and leak current have been compared by C-V measurement.
对P 硅基体的MOS ,MNS ,MNOS 3种钝化系统通过C V特性测试和电性能分析 ,系统比较了不同结构及在不同的工艺条件下的介面态 ,介面固定正电荷和漏电流等参数。
补充资料:电荷产生层材料
分子式:
CAS号:

性质:有机光导体中产生电荷的有机材料。主要是由光导电性功能染料和高分子粘接剂组成的,已经开发应用的染料有蒽醌类、苝类、偶氮类、方形酸类、菁类、酞菁类等化合物。一般要求电离势较低,光照时容易产生分离的电子和正穴的化合物。

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