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1)  silica [英]['sɪlɪkə]  [美]['sɪlɪkə]
硅体
1.
Concentrated acid solution by mixing nitrate and sulfuric acids was used to isolate silicas from leaves of 8 wild rice species and silica was observed with optical microscope and scanning electron microscope.
用强酸溶液分离8个野生稻种叶片中的硅体并用光学显微镜和电子扫描显微镜进行观测研究。
2.
Nanoscale Silicas in Oryza Sativa L. and Their UV Absorption;
为了了解水稻中硅的亚显微结构及其紫外吸收特性,根据强酸不会腐蚀SiO2玻璃的事实,选择湿消化方法分离水稻中的硅体
2)  silica body
硅体
1.
In the leaf,however,the structure of the silica bodies is more complex because there are three types of silica body.
研究了水稻成熟叶片和稻壳中硅体的物相、自发荧光、红外和紫外吸收特性。
3)  bulk silicon
体硅
1.
In this paper, the measurement results and the analyses of bulk silicon MOS devices at high temperature range(25~300 ℃) are presented.
首先介绍了体硅 MOS器件在 2 5~ 30 0℃范围高温特性的实测结果和分析 ,进而给出了薄膜 SOI MOS器件在上述温度范围的高温特性模拟结果和分析 ,最后介绍了国际有关报道的Si C MOS器件在 2 2~ 4 50℃范围的高温特性。
4)  bulk-silicon
体硅
1.
The optimal 100 V bulk-silicon N-LDMOS,which was compatible with the standard low voltage CMOS process,was proposed after the simulationson of the parameters of the N-LDMOS.
为了设计一款100V体硅N-LDMOS器件,通过借助Tsuprem-4和Medici软件详细讨论分析了高压N-LDMOS器件衬底浓度、漂移区参数、金属场极板长度等与击穿电压、开态电阻之间的关系,最终得到兼容体硅标准低压CMOS工艺的100V体硅N-LDMOS最佳结构、工艺参数。
2.
A new 2D analytical model for the surface electrical field distribution and optimization of bulk-silicon double RESURF devices is presented.
提出了体硅double RESURF器件的表面电场和电势的解析模型。
3.
The optimal 500 V bulk-silicon N-LDMOS, which was compatible with the standard low voltage CMOS process, was proposed after the simulations on the parameters of the N-LDMOS.
借助Tsuprem-4和Medici软件详细讨论分析了高压N-LDMOS器件的衬底浓度、漂移区注入剂量、金属场极板长度等参数与击穿电压之间的关系,通过对各参数的模拟设计,最终得到兼容体硅标准低压CMOS工艺的500V体硅N-LDMOS的最佳结构、工艺参数,通过I-V特性曲线可知该高压N-LDMOS器件的关态和开态击穿电压都达到500V以上,开启电压为1。
5)  silicon crystal
硅晶体
1.
The fixed-abrasive wire sawing technology is supposed to be used for slicing hard-brittle materials such as silicon crystal widely in the future,and the development of high performance fixed-abrasive diamond wire saw is the key of application for this technology.
固结磨料金刚石线锯切割技术有望在将来广泛地应用于硅晶体等硬脆材料的切割,而高性能的固结磨料金刚石锯丝的研制是此技术发展应用的关键。
2.
This treatment is effective in refining and sphericizing primary silicon crystal,forming microconstituents of dispersion.
达到了细化、球化硅晶体的效果, 获得了分布均匀的微观组织。
6)  silicon-copper mass
硅铜触体
1.
For attaining this it was necessary that monitoring rial quality and adjusting to silicon-copper mass in the reaction process.
为达到此目的,监测原材料的质量和调整反应过程中硅铜触体是必需的。
补充资料:氮化硅纤维增强体(见氮化硅纤维)


氮化硅纤维增强体(见氮化硅纤维)
silicon nitride fibres reinforcements

夔薰黔慧燃泳
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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