This paper discussed the electrical characteristic of short channel MOST at very high temperature.

Threshold voltage in short-channel SOI BJMOSFET;

Through solving possion equation, the characteristics of short-channel MOSFET device is analyzed in details in the following three aspects: the effect of channel length modulation , the change of threshold voltage and potential barrier decrease between source and channel.

A threshold voltage model for short-channel MOSFET is developed by solving a 2-D Possion s equation.

The model includes the substrate bias effect, the short channel effect and the relation between these two effects.

Based on the hydrodynamic energy transport model, the short channel effect immunity in the deep sub micron grooved gate PMOSFET is studied together with the influences of substrate and channel doping density on that effect immunity.

I V characteristics and sub threshold characteristics,as well as the short channel effect(SCE) are carefully investigated.

Computer simulation analysis of short-channel effects and corner effectsfor deep sub-micron triple-gate FinFETs

A new kind of sub-50 nm N channel double gate MOS nanotransistors was simulated by solving coupling Poisson-Schrdinger equations in a self-consistent way with a finite element method,and a systematic simulation-based study was presented on the short-channel effects.

In this paper the methodology of modeling and characterization of modern MOSFET ,with emphasis on short-channel effects of deep-submicorns devices up to 0.