2) switching property
开关特性
1.
The operating condition of Power MOSFET in practical applications is very different from the descriptions in current documents,and misemploy of Power MOSFET easily results in device damage and equipment breakdown,so the switching property of Power MOSFET is studied as viewed from practices.
针对实际应用中Power MOSFET开关工作状况与现有文献的描述有很大不同,使用不当易造成器件的损坏和设备的崩溃这一现象,在应用条件下对Power MOSFET开关特性进行了研究,深入分析了Power MOSFET的开关过程,提出了关于开关过程四阶段的新观点,并采用对开关过程的等效输入电容进行分段线性化的新方法对不同阶段的开关参数进行了计算,搭建了开关特性实验电路,实验结果表明,提出的Power MOSFET开关过程四阶段的新观点是正确的,等效输入电容分段线性化的新方法是合理的。
3) switching characteristic
开关特性
1.
By using the mathematical model of solenoid valve and combining the digital simulation, the paper researches the mechanism of switching characteristics of the valve.
为改善高速电磁阀的开关特性，从电磁阀的数学模型着手，用实验仿真的方法，分析了高速电磁阀的开关特性机理，提出了高速开关阀的设计准则，探讨了阀芯质量、阀芯行程、线圈匝数、线圈电阻、驱动电压与电流等各参数对开关特性的影响。
2.
The Ishibashi Takagi theory on the switching characteristics of ferroelectrics for categories Ⅰ and Ⅱ are compared with results obtained by considering joined effect of both categories.
将 Ishibashi- Takagi的 类和 类铁电薄膜开关特性理论与同时考虑两种类型的理论结果进行了比较 ,研究结果表明 ,Ishibashi- Takagi理论较合理地反应了铁电薄膜中电畴反转特征 ,仅在较小范围内有必要考虑 、 类铁电体的联合作
3.
The switching characteristics of such power devices have direct impacts upon the converter performance.
IGBT功率开关器件在现代大功率变换器中的应用非常广泛,其开关特性直接影响到变换器的性能。
4) Switching characteristics
开关特性
1.
The influences of the small signal gain and loop s time asymmetry on the switching characteristics of TOAD are studied in detail considering thoroughly the effects of the gain saturation and recovery of the semiconductor optical amplifier (SOA) in a terahertz optical asymmetric demultiplexer (TOAD).
充分考虑了太赫兹光非对称解复用器 (TOAD)中半导体光放大器 (SOA)的增益饱和与恢复的影响 ,深入分析研究了小信号增益及环时间非对称性对TOAD开关特性的影响 。
2.
The switching characteristics of ferroelectric thin films and the measurement of relevant parameters are discussed.
分析测量了铁电薄膜的开关特性。
3.
In this paper, the influences of nonlinear gain compression (NGC) on switching characteristics of a terahertz optical asymmetric demultiplexer (TOAD) are investigated thoroughly by taking into account the gain saturation and NGC effects of semiconductor optical amplifier (SOA).
考虑半导体光放大器 ( SOA)的增益饱和与非线性增益压缩效应 ,详细研究了非线性增益压缩对太赫兹光非对称解复用器 ( TOAD)开关特性的影响 ,并首次提出了有效开关窗口宽度的概念 。
5) gating characteristics
开关特性
1.
The effect of PMAA grafting yield on the gating characteristics of pH-responsive gating membrane was investigated systematically.
利用等离子体诱导填孔接枝聚合法在聚偏氟乙烯多孔膜上接枝聚甲基丙烯酸pH感应型开关,系统研究了接枝率对膜的pH感应开关特性的影响。
2.
A series of pH responsive gating membranes, with a wide range of grafting yields, were prepared by grafting poly(acrylic acid) (PAAC) onto porous polyvinylidene fluoride (PVDF) membrane substrates with a plasma induced pore filling polymerization method The effect of grafting yields on gating characteristics of pH responsive gating membranes was investigated systematically.
然而,在这类开关膜的接枝率对其膜孔开关特性的影响方面,研究报道尚很少见。
3.
The effect of grafting yield on gating characteristics of thermo-responsive gating membranes was investigated systematically.
利用等离子体诱导填孔接枝聚合法将聚 (N 异丙基丙烯酰胺 ) (PNIPAM)接枝聚合在聚偏氟乙烯(PVDF)微孔膜上制备了一系列具有较宽接枝率范围的温度感应式开关膜 ,系统地研究了接枝率对膜的温度感应开关特性的影响 。
6) Switching Performance
开关特性
1.
Switching Performance and Safe\|Operation\|Area for MOS Dual\|Gated Emitter\|Switched Thyristor;
双MOS门极控制的EST的开关特性和安全工作区
补充资料：介电损耗特性
分子式：
CAS号：
性质：电介质的介电损耗因数和介电常数受到频率、温度、电压及湿度等种种外界条件影响而变化的性质。通过给出高分子材料的介电损耗特性，可为使用者提供更加全面的性能信息。从而为合理使用材料提供依据。
CAS号：
性质：电介质的介电损耗因数和介电常数受到频率、温度、电压及湿度等种种外界条件影响而变化的性质。通过给出高分子材料的介电损耗特性，可为使用者提供更加全面的性能信息。从而为合理使用材料提供依据。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条