1) tunneling rate
隧穿率
1.
The result shows that the tunneling rate of particle at the event horizon and the cosmic horizon is relevant to Bekenstein-Hawking entropy,and the radiation spectrum is not strictly pure thermal.
结果表明在能量守恒的条件下,此黑洞事件视界和宇宙视界处粒子的隧穿率与Bekenstein-Hawking熵有关,真实的辐射谱不再是严格的纯热谱,这是对Hawking纯热谱的正确修正。
2.
Results obtained from both methods support the viewpoint of Parikh and Wilczek s, that is, the tunneling rate is related to the change of Bekenstein-Hawking.
两种方法所得的结果都支持Parikh-Wilczek的观点,即黑洞的隧穿率Bekenstein-Hawking熵变有关,真实的辐射谱不是纯热谱。
3.
The result shows that the tunneling rate at the event horizon of the black hole is relevant to Bekenstein-Hawking entropy and the exact radiation spectrum is not pure thermal one when the self-gravitation and energy conservation are taken into consideration.
当考虑粒子的自引力作用和能量守恒时,Gibbons-Maeda dilation黑洞视界处的粒子隧穿率与Bekenstein-Hawking熵有关,黑洞真实的辐射谱不再是严格的纯热谱。
2) transmission coefficient
隧穿几率
1.
By using the coherent quantum transport theory and transfer matrix method,the transmission coefficient and tunnel magnetic resistance for polarized electrons with different spin orientations through ferromagnetic/semiconductor/ferromagnetic tunnel junctions are investigated.
采用相干量子输运理论和传递矩阵方法研究了具有不同自旋指向的极化电子渡越铁磁/半导体/铁磁隧道结的隧穿几率和隧穿磁电阻。
2.
By using the coherent quantum transport theory and transfer matrix method,the transmission coefficient and spin polarization for polarized electrons with different spin orientations through ferromagnetic/semiconductor/ferromagnetic heterostructures have been investigated.
采用相干量子输运理论和传递矩阵方法,研究了具有不同自旋指向的极化电子渡越铁磁/半导体/铁磁异质结构的隧穿几率和自旋极化率。
3) small curvaturetunneling
小曲率隧道贯穿
4) electronic tunneling probability
电子隧穿几率
5) tunneling
[英]['tʌnəlɪŋ] [美]['tʌnəlɪŋ]
隧穿
1.
Resonant tunneling of acoustic waves in 1D phononic crystal;
声波在一维声子晶体中共振隧穿的研究
2.
Quantum Magnetic-tunneling Through a CaAs/Ga_(1-x)Al_xAs Superlattices:a Calculation of the Transmission Coefficient;
GaAs／Ga_（1－x）Al_xAs超晶格结构中量子磁隧穿传输系数的计算
3.
Influence of electron-phonon interaction on single electron tunneling in a quantum dot molecule;
电声子相互作用对量子点分子中单电子隧穿的影响
6) Tunnel
[英]['tʌnl] [美]['tʌnḷ]
隧穿
1.
The current voltage characterization of a standard double barrier tunneling junctions(DBTJ) which forms room temperature single electron devices is computed by means of time dependent Schrdinger equation.
对形成室温单电子现象的典型串联双隧道结结构模型 ,利用含时薛定谔方程的求解 ,计算了其隧穿电流与偏压的关系 。
2.
In this letter, the current-voltage characteriazation of a standard tunneling junctions which forms room temperature single electron devices is computed by the solution of Schrodinger equation using WKB method.
本文对形成室温单电子现象的典型隧道结结构模型利用 WKB方法求解薛定谔方程计算其隧穿电流与偏压的关系。
3.
In this letter,the current voltage characteristic of a standard double barrier tunneling junctions (DBTJ),which forms room temperature single electron devices,is computed by solving the time dependent Schr[AKo¨D]dinger equation.
对形成室温单电子器件的典型串联双隧道结结构模型利用求解含时薛定谔方程计算了其隧穿电流与偏压的关系 。
补充资料：隧穿效应
分子式：
CAS号：
性质：见隧道效应。
CAS号：
性质：见隧道效应。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条