1) Al x Ga 1-x N/GaN heterostructure
AlxGa1-xN/GaN异质结构
2) GaN/Al_xGa_1-xN heterojunction
GaN/AlxGa1-xN异质结
1.
A modified variational method is adopted to investigate the binding energies of the shallow impurity states near the interface of a strained GaN/Al_xGa_1-xN heterojunction by using a simplified coherent potential approximation.
对应变GaN/AlxGa1-xN异质结系统,考虑理想界面突变势垒,引入简化相干势近似,采用变分法讨论了流体静压力下外界电场对束缚于界面附近的浅杂质态结合能的影响。
3) Al xGa 1-x N/GaN heterostructure
AlxGa1-xN/GaN异质结
4) Al xGa 1-xN/GaN heterostructure
AlxGa1-xNGaN异质结构
5) Al_xGa_ 1-x N/GaN double quantum wells
AlxGa1-xN/GaN双量子阱
6) GaN/Al_xGa_(1-x)N quantum dots
GaN/AlxGa1-xN量子点
补充资料:镁铬质耐火材料基质结构单元显微结构
镁铬质耐火材料基质结构单元显微结构
镁铬质耐火材料基质结构单元显微结构
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