In this paper,based on the solar grade silicon MOS,MNS and MNOS systems have been analysed and the interface states,fixed positive charges and leak current have been compared by C-V measurement.

Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density;

To make good use the high energy of solar energy, AlxGa1-xAs was designed to be a added wok layer, and fixed negative charges were introduced on the interface of MIp-AlxGa1-xAs, and the induced potential on interface was established as well, which would result in the formation of MIp+-AlGaAs induced junction and effective diminishment of interface recombination.

By introducing fixed negative charges on the surface of insulation layer of MIp Al x Ga 1 x As which were covered by anti reflection coating, the holes in p Al x Ga 1 x As layer were induced to interface, and the induced potential of electrons on interface was established.

And it was creative to introducing fixed negative charges to change the shape of the band and to establish an induced potential which would prevent the photo-generated electrons from moving to interface, so as to dropping the interface recombination velocity.

Transport phenomena of charged membranes based on the charge models (including the space charge model and the fixed charge model) are cataloged into the three kinds, that is,separation performance,electro-kinetic properties and transport characteristics with respect to the charge effect.