1) Energy spectrum level
能谱级
3) spectrum level
谱能级
4) spectrum degradation
能谱降级
5) deep level transient spectroscopy
深能级瞬态谱
1.
Pulse neutron radiation induced trap s in neutron-transmutation doped(NTD) Si diodes and their annealing behaviors h ave been investigated by means of deep level transient spectroscopy(DLTS), and c ompared with the results of thermal neutron irradiated samples.
深能级瞬态谱仪 (DL TS)测量表明硅中主要存在五类电活性缺陷 :氧空位 E1(Ec- 0 。
2.
A quantum dot (QD), the behavior of which is to capture and emit carriers like a giant trap, is studied using deep level transient spectroscopy (DLTS) technique.
用原子力显微镜(AFM)进行表面形貌的表征,并利用光致发光(PL)和深能级瞬态谱(DLTS)对InAs量子点进行观测。
3.
Using deep level transient spectroscopy,We studies the defect levels of BSF silicon solar cell irradiated by C,O ions.
对ＢＳＦ硅太阳电池受碳、氧离子辐照前后的深能级瞬态谱进行了研究，结果表明碳、氧离子在硅太阳电池中引入的缺陷能级非常相似。
6) DLTS
深能级瞬态谱(DLTS)
补充资料：VGESCALABMKII电子能谱仪
VGESCALABMKII电子能谱仪
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说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条