说明:双击或选中下面任意单词,将显示该词的音标、读音、翻译等;选中中文或多个词,将显示翻译。
您的位置:首页 -> 词典 -> 薄膜磁阻效应
1)  thin film magnetic-resistance effect
薄膜磁阻效应
1.
The thin film magnetic-resistance effect is measu.
采用单片机 80 31模拟三角波输出而产生超低频扫场电源 ,克服阻容元件线差波形不稳定 ,用 8位单片机与 16位数模转换器进行接口 ,给出了控制系统、D/A转换、恒流和功率驱动电路以及软件设计 ,以四探针、六探针法测量 ,实现对薄膜磁阻效应的自动测
2)  AMR thin film
磁电阻薄膜
3)  membrane action
薄膜效应
1.
Model validation and application of membrane action in slabs of steel buildings subjected to fire;
火灾下钢结构建筑楼板的薄膜效应模型验证及实用方法
2.
Mechanism and theoretical model of membrane action in slabs of steel buildings subjected to fire;
火灾下钢结构建筑楼板的薄膜效应机理及理论模型
3.
An innovative analytical method for the membrane action of composite floor slabs in fire
火灾下组合楼板薄膜效应分析的改进方法
4)  membrane effect
薄膜效应
1.
Model of geosynthetics reinforced pavements based on membrane effect;
考虑薄膜效应的土工合成材料加筋道路模型
2.
Analysis of membrane effects in reinforced concrete slabs subjected to fire
火灾下钢筋混凝土楼板的薄膜效应分析
3.
Experiment results existed show that when horizontal boundaries of reinforced concrete slab are restrained its ultimate bearing capacity is significantly higher than that has not, which is called membrane effect.
已有的试验结果表明,在支承边界受到水平约束条件下,钢筋混凝土板的极限承载力明显高于未受水平约束板的极限承载力,这种现象称为“薄膜效应”。
5)  magnetoresistance effect
磁阻效应
1.
This paper introduces the principles of several magnetoresistance effects in details.
对几种磁阻效应作用机理和磁阻元件在传感器中的应用进行了综述,详细介绍了几种磁阻传感器的工作原理,对几类常用的磁阻传感器的性能进行了比较,并对磁阻传感器的发展进行了展望。
2.
It is shown that there exists a significant transmission difference for electrons through parallel and antiparallel magnetization configurations,which leads to a considerable magnetoresistance effect.
由于电子通过器件的平行和反平行磁化构型的透射几率显著不同,因而该器件拥有相当的磁阻效应。
3.
Using the divalence element Sr to replace the position of La in LaMnO 3 materials,  La 1-x Sr x MnO 3 materials has been successfully prepared with excellent single phase and distorted perovskite structure and magnetoresistance effect.
利用二价金属元素Sr 对LaM nO3 材料进行了La 位替代,成功地制备了单相性好、具有扭曲钙钛矿结构和磁阻效应的La1- x Srx M nO3 材料。
6)  magnetoresistive effect
磁阻效应
1.
Magnetoresistive effect of semiconducting diamond films;
半导体金刚石膜的磁阻效应
补充资料:稀土石榴石单晶薄膜磁光材料
分子式:
CAS号:

性质:用外延生长法在常用衬底Gd3Ga5O12单晶(111)晶面上生成稀土石榴石单晶薄膜材料。恒温5~30min,可得薄膜2~30μm。利用生长工艺参数的变化可制取不同组成和性能的磁光薄膜材料。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条