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1)  negative bias pulsed power
脉冲负偏压电源
1.
Several pulsed parts made up a negative bias pulsed power,whose frequency and duty cycle is regulated directly at the side of high voltage.
一种脉冲负偏压电源是由多个脉冲分量形成的电路串联构成 ,脉冲的频率和占空比直接在高压侧调节。
2)  pulse-bias power supply
脉冲偏压电源
3)  pulsed voltage generator
电压脉冲电源
4)  negative pressure pulse
负压脉冲
1.
Conclusion The parameter was to take three times negative pressure pulse and five times pressure pulse, sterilization temperature 134℃, sterilization time 11min and dry time 11min, matching to sterilization request of "Technical Standard For disinfection".
结论:灭菌参数为负压脉冲3次,正压脉冲5次,灭菌温度134℃,灭菌时间11min,干燥时间11min,达到《消毒技术规范》的灭菌要求。
5)  pulsed bias
脉冲偏压
1.
Effect of pulsed bias on chemical structure of DLC films prepared by plasma processing;
脉冲偏压对等离子体沉积DLC膜化学结构的影响
2.
Investigation on CN_x films deposited by pulsed bias arc ion plating;
脉冲偏压电弧离子镀CN_x薄膜研究
3.
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.
结果表明:增加脉冲偏压、脉冲频率、脉宽、射频功率和气压能提高Ar离子对PTFE靶的溅射能力,增加空间中氟碳自由基的数量,其中各参数对峰位位于25。
6)  pulse bias
脉冲偏压
1.
Influence of pulse bias on surface properties of TiN films fabricated by arc ion plating with large rectangle targets;
脉冲偏压对矩形平面大弧源离子镀TiN膜层性能的影响
2.
Orthogonal designs are used to investigate the effect of various parameters on TiN coating in arc ion plating techniques when pulse bias is imposed.
用正交设计实验研究了电弧离子镀技术中采用脉冲偏压以后各种参数对沉积TiN薄膜性能的影响。
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