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1)  HfO 2
HfO2
1.
A novel technique has been developed to selectively etch HfO 2 and RZJ 306 photo-resist by adjusting RF self-bias and the gas pressure of the inductively coupled plasma of CHF 3,Ar and H 2.
通过改变偏压功率和气体气压的宏观条件 ,利用CHF3 ,Ar和H2 的感应耦合等离子体 (ICP)对HfO2 和RZJ 30 6光刻胶进行了刻蚀选择性实验研究。
2.
High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation.
使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 。
3.
HfO 2/SiO 2 multilayer reflective mirrors were deposited on BK7 substrates by E-beam evaporation.
用两种不同纯度的HfO2 材料与同一纯度的SiO2 材料组合 ,沉积λ/ 4规整膜系 (HL) 11H形成 2 6 6nm的紫外反射镜 ,发现反射率相差 0 。
2)  HfO_(2)/SiO_(2)
HfO2/SiO2
3)  HfO2 thin film
HfO2薄膜
1.
HfO2 thin films were prepared by electron beam evaporation.
HfO2薄膜是用电子束蒸发方法制备的,利用ZYGO干涉仪测量了基片镀膜前后曲率半径的变化,计算了薄膜应力。
4)  HfO_2 film
HfO2薄膜
1.
HfO_2 films were grown by reactive dc magnetron sputtering in a gaseous mixture with different O_2/Ar ratios.
在不同氧氩比例气氛下,采用直流磁控反应溅射方法制备了HfO2薄膜。
2.
Ion beam etching of HfO_2 film;
实验研究了HfO2薄膜特性以及掩模材料AZ1350以Ar为工作气体下的离子束的刻蚀特性。
5)  HfO2 thin films
HfO2薄膜
1.
Post deposition annealing was conducted on as-deposited HfO2 thin films.
采用纯铪(Hf)金属靶,在氧和氩反应气氛中进行了HfO2薄膜反应磁控溅射沉积,研究了电源功率、O2/Ar比例和工作气压对薄膜组成及薄膜沉积过程的影响。
2.
HfO2 thin films were prepared with chemical method.
32 J/cm2,比热处理前的激光损伤阈值提高了82%;无机材料Al2O3的适量添加能够提高薄膜的激光损伤阈值,其中HfO2与Al2O3的最佳质量配比约为95∶5;另外,对薄膜进行适当的紫外辐照也可改善HfO2薄膜以及HfO2-Al2O3复合薄膜的抗激光损伤性能。
3.
The optical performance and the structure of the as-deposition HfO2 thin films at different deposition temperatures were characterized by Ellipsometry and XRD.
采用纯铪(Hf)金属靶,在氧+氩反应气氛中进行了HfO2薄膜直流反应磁控溅射沉积。
6)  HfO_2 films
HfO2薄膜
1.
HfO_2 films were prepared by electron beam evaporation on BK7 glass and fused silica substrates.
采用电子束蒸发沉积方法在BK7玻璃基底和熔融石英基底上沉积了HfO2薄膜,研究了不同沉积温度下的应力变化规律。
2.
HfO_2 films were prepared by electron beam evaporation.
用电子束蒸发方法制备了HfO2薄膜,根据镀膜前后基片曲率半径的变化,用Stoney公式计算了薄膜应力,讨论了沉积温度对薄膜残余应力的影响。
3.
HfO_2 films were prepared by electron beam evaporation on K9 glass.
采用ZYGOMarkIII-GPI数字波面干涉仪对以K9玻璃为基底的电子束蒸发方法制备的HfO2薄膜中的残余应力进行了研究,讨论了沉积速率、氧分压这两种工艺参量对HfO2薄膜残余应力的影响。
补充资料：acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
CAS：13170-23-5
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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