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1)  new seed layer
新种子层
1.
Effects of the seed layer thicknesses on zero field resistivity and AMR in permalloy films with new seed layer NiFeNb;
种子层厚度对以NiFeNb为新种子层的坡莫合金薄膜的零场电阻率和AMR的影响
2.
Zero field resistivity of nanometer permalloy films with new seed layer NiFeNb;
以NiFeNb为新种子层的纳米级坡莫合金薄膜的零场电阻率
3.
The ternary NiFeNb is used as the new seed layer and the films(Ni_(82)Fe_(18))_((1-x))Nb_(x )(35)/Ni_(82)Fe_(18)(150)/Ta(30) with different Nb atom concentrations (x) are prepared with a direct current magnetron sputtering system.
以NiFeNb为新种子层,采用直流磁控溅射法制备了(Ni82Fe18)(1-x)Nbx(35 )/Ni82Fe18(150 )/Ta(30 )纳米级坡莫合金系列膜。
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2)  parental seeds
新、陈种子
3)  newly-harvested seeds
新种子
4)  Seed regeneration
种子更新
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5)  PT seedings
PT种子层
1.
The effect of the prepared PZT thin films with PT seedings on the microstructure and electrical properties were investigated.
以乙酸铅(Pb(CH3COO)2·3H2O)、钛酸四丁酯(Ti(OC4H9)4)、硝酸锆(Zr(NO3)4·5H2O)替代锆醇盐为原料,通过在Pt/Ti/siO2/si基片与PZT薄膜之间引入PT种子层,采用改进的sol-gel工艺制备出无裂纹,致密性好,晶粒尺寸小且分布均匀的单一钙钛矿结构的Pb(Zr0。
6)  TiO_2 seeding layer
TiO_2种子层
1.
85)Ti_3O_(12)(BNT)thin films with and without a TiO_2 seeding layer were fabricated on Pt/Ti/SiO_2/Si substrates by sol-gel method at 750℃.
用sol-gel法分别制备了直接沉积在Pt/Ti/SiO_2/Si衬底上和加入了TiO_2种子层的Bi_(3。
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补充资料：新薰种子
【新薰种子】
　（术语）本有种子之外，有新薰种子。(参见：种子)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条