1) Si multi-strip detector
硅多条探测器
1.
The technics and test results and preliminary applications of Si multi-strip detector fabricated by using microelectronic technique were described in this paper.
描述了用微电子工艺技术成功研制硅多条探测器的制备工艺技术及测试结果。
2) Silicon strip detector
硅条探测器
3) Silicon strip array detector
硅多条阵列探测器
4) silicon microstrip detector
硅微条探测器
1.
This paper measured the plateau curve,height of pulse related with bias voltage of silicon microstrip detector which was before and after exposed,and the leakage current as well as size of `black hole after exposed.
测量了硅微条探测器在辐照前后的坪曲线、脉冲高度与偏置电压的关系，及辐照后的总漏电流和黑洞的大
5) silicon detector
硅探测器
1.
It is made of static high voltage collecting cylinder room, appropriative pump, samping system, filtrator, a silicon detector and a surface - barrier semiconductor detector.
含有两个探测器(测量氧子体的φ20mm的硅探测器和测量氡浓度的φ30mm金硅面垒探测器)。
6) photodetector of silicon
硅光探测器
补充资料：辐射探测器用硅单晶
辐射探测器用硅单晶
silicon crystal for radiation detector
fushe toneeqlyong guldonjrng辐射探测器用硅单晶(silieon crystal for ra-diation deteetor)用于X射线探测器的半导体材料。硅可用于制作结型、面晶型、锉漂移型等多种射线辐射探测器。虽然各种探测器都有自己的特殊要求，但其共同的要求是:碳含量低于2x1016/c m3;氧含量低于lxlo‘6/cm“;深能级杂质如铁、镍等低于1丁‘。g/g;少子寿命大于500娜;对微缺陷的种类与分布要进行控制等。这些单晶均用区熔法制成。为达到高纯的目的，要采用基磷与基硼含量很低的多晶，以硅烷法多晶为主。在成晶前需进行多次真空区熔提纯，提纯过程应避免碳等杂质的污染，并保持真空度不高于10一甲a。对n型高阻单晶，现在多采用中子擅变掺杂法以保证良好的均匀性。材料的适用性常以作出探测器的性能参数作为主要的判据。单晶的需求量不大。 (那云英)
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参考词条