1) silicon photodetector
硅光伏探测器
1.
of temperature compensation of silicon photodetector, and point out their adaptable conditions and compensational accuracy.
根据对沥清-苯溶液浓度测试仪中进行温度补偿的实践，介绍了三种对硅光伏探测器温度补偿的方法，并指出了这三种方法各自适应的情况及补偿精度的高低。
2.
This paper presents the design method of silicon photodetector amplification circuit in bitumen benzene solution density intelligent measurer, and points out some problems that should be considered when this kind of circuits is designed.
介绍了沥清－苯溶液浓度智能检测仪中硅光伏探测器放大电路的设计方法，并指出在设计这类电路时所应注意的问题。
2) photovoltaic detectors
光伏探测器
1.
Surface leakage can make a great effect on Hg1-xCdxTe photovoltaic detectors.
表面漏电流能对Hg1-xCdxTe光伏探测器性能产生很大的影响,因此选择合适的钝化工艺尤其重要。
3) photovoltaic detector
光伏探测器
1.
Transient and permanent defects of HgCdTe photovoltaic detectors by γ irradiation
γ辐射对碲镉汞光伏探测器的暂态损伤与永久损伤
2.
Two types of variable-area photovoltaic detectors passivated by single ZnS layer and dual (CdTe/ZnS) layers have been fabricated on the same HgCdTe wafer.
利用同一片碲镉汞材料制备了由单层ZnS和双层CdTe/ZnS作钝化膜的变面积光伏探测器,对两种钝化膜结构的变面积器件进行了对比研究。
3.
47)As/InP photovoltaic detector array has been fabricated by using gas source molecular beam epitaxy(GSMBE) and conventional process,and the characteristics of detector array have been measured.
47As/InP光伏探测器阵列,并对其特性进行了测量,结果表明GSMBE生长的材料具有很好的均匀性。
4) photodiode
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光伏探测器
1.
An data-processing method was developed to obtain the device parameters from the resistance-voltage(R-V) characteristics measured in long-wavelength HgCdTe photodiode.
报道了一种适用于碲镉汞长波光伏探测器的由典型电阻电压(R-V)曲线提取器件基本特征参数的数据处理途径。
2.
The dark current mechanism of B + implanted n on p planar photodiode and Indium doped n + n p hetero junction mesa photodiode formed in situ by molecular beam epitaxy for Mercury Cadmium Telluride long wavelength detector was compared and analyzed.
对B+注入的n on p平面结和分子束外延 (MBE)技术原位铟掺杂的n+ n p台面异质结的碲镉汞 (HgCdTe)长波光伏探测器暗电流进行了对比分析 。
5) photodetector of silicon
硅光探测器
6) HgCdTe photovoltaic detector
HgCdTe光伏探测器
1.
Reverse Bias Dark Current Mechanisms Analyses of HgCdTe Photovoltaic Detector;
HgCdTe光伏探测器反偏暗电流机制分析
补充资料：辐射探测器用硅单晶
辐射探测器用硅单晶
silicon crystal for radiation detector
fushe toneeqlyong guldonjrng辐射探测器用硅单晶(silieon crystal for ra-diation deteetor)用于X射线探测器的半导体材料。硅可用于制作结型、面晶型、锉漂移型等多种射线辐射探测器。虽然各种探测器都有自己的特殊要求，但其共同的要求是:碳含量低于2x1016/c m3;氧含量低于lxlo‘6/cm“;深能级杂质如铁、镍等低于1丁‘。g/g;少子寿命大于500娜;对微缺陷的种类与分布要进行控制等。这些单晶均用区熔法制成。为达到高纯的目的，要采用基磷与基硼含量很低的多晶，以硅烷法多晶为主。在成晶前需进行多次真空区熔提纯，提纯过程应避免碳等杂质的污染，并保持真空度不高于10一甲a。对n型高阻单晶，现在多采用中子擅变掺杂法以保证良好的均匀性。材料的适用性常以作出探测器的性能参数作为主要的判据。单晶的需求量不大。 (那云英)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条