1) Al-induced crystallization
Al诱导晶化
2) aluminum-induced crystallization
铝诱导晶化
1.
Study on aluminum-induced crystallization of amorphous silicon thin film;
铝诱导晶化非晶硅薄膜研究
2.
Amorphous silicon(a-Si) thin films were deposited on glass substrate by PECVD; polycrystalline silicon(poly-Si) thin films were prepared by aluminum-induced crystallization(AIC) with annealed under nitrogen atmosphere.
利用PECVD设备在普通玻璃基片上沉积a-Si薄膜,采用铝诱导晶化法(AIC)在氮气气氛下进行快速退火处理制备出poly-Si薄膜。
3.
This article introduced the method of fabricating poly-Si thin films by aluminum-induced crystallization(AIC)of amorphous silicon, and described the general process of fabricating poly-Si thin films.
本文介绍了利用铝诱导晶化非晶硅制备多晶硅薄膜的方法,叙述了铝诱导晶化法制备多晶硅薄膜的一般过程,着重讨论了铝诱导晶化非晶硅的机理和在制备过程中各种参数对多晶硅薄膜质量的影响。
3) Al induced
Al诱导
4) metal induced crystallization
金属诱导晶化
1.
Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source;
大尺寸化学Ni源金属诱导晶化多晶硅的研究
2.
Amorphous silicon (a Si) films is deposited by PECVD and is crystallized by metal induced crystallization (MIC) at various temperatures.
利用金属诱导晶化 (Metal Induced Crystallization,MIC)的方法研究了 a- Si/Ni的低温晶化 ,MIC的晶化温度降低到 440℃。
5) LIC
激光诱导晶化
6) MIC
[英][maɪk] [美][maɪk]
金属诱导晶化
1.
Process and material characterization of crystallization of amorphous silicon(a-Si) by metal-induced crystallization(MIC) and metal-induced lateral crystallization(MILC) using sputtered Ni on(amorphous) silicon film to prepare polysilicon(p-Si) film were investigated.
对在氢化非晶硅薄膜(a-Si∶H)上溅射金属Ni的样品进行金属诱导晶化(MIC)/金属诱导横向晶化(MILC),制备多晶硅薄膜(p-Si)的工艺及薄膜特性进行了研究。
补充资料：多晶莫来石晶须(纤维)
分子式：
CAS号：
性质：莫来石相为主晶相的多晶纤维。化学成分为Al2O3 72％～77％，SiO222％～17％，B2O3 3％～5％，P2O51.5％～3.0％。纤维直径2～7μm，纤维长度20～125μm。使用温度1350℃。多采用溶胶-凝胶法制造。主要用作补强填料，也可作为轻质、隔热保温材料使用。
CAS号：
性质：莫来石相为主晶相的多晶纤维。化学成分为Al2O3 72％～77％，SiO222％～17％，B2O3 3％～5％，P2O51.5％～3.0％。纤维直径2～7μm，纤维长度20～125μm。使用温度1350℃。多采用溶胶-凝胶法制造。主要用作补强填料，也可作为轻质、隔热保温材料使用。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条