1) tunneling theory
隧穿理论
1.
The phenomenon was explained with tunneling theory and flat band model.
对于上述现象用隧穿理论以及直带模型进行了解释。
2.
3nm LiF ultra-thin layer shows the optimal effects and explained based on tunneling theory.
3nm，并用隧穿理论对其发光机理进行了解释。
2) theory of fluctuation induced tunneling conduction
涨落诱导隧穿导电理论
3) tunnel theory
隧道理论
1.
The nonlinear behavior of the high adhesive qualified material is well explained by tunnel theory.
揭示了组分含量对摩擦磨损性能的影响,并用隧道理论较好地解释了高粘合剂含量时材料的非线性电行为。
4) penetration theory
穿透理论
5) tunneling
[英]['tʌnəlɪŋ] [美]['tʌnəlɪŋ]
隧穿
1.
Resonant tunneling of acoustic waves in 1D phononic crystal;
声波在一维声子晶体中共振隧穿的研究
2.
Quantum Magnetic-tunneling Through a CaAs/Ga_(1-x)Al_xAs Superlattices:a Calculation of the Transmission Coefficient;
GaAs／Ga_（1－x）Al_xAs超晶格结构中量子磁隧穿传输系数的计算
3.
Influence of electron-phonon interaction on single electron tunneling in a quantum dot molecule;
电声子相互作用对量子点分子中单电子隧穿的影响
6) Tunnel
[英]['tʌnl] [美]['tʌnḷ]
隧穿
1.
The current voltage characterization of a standard double barrier tunneling junctions(DBTJ) which forms room temperature single electron devices is computed by means of time dependent Schrdinger equation.
对形成室温单电子现象的典型串联双隧道结结构模型 ,利用含时薛定谔方程的求解 ,计算了其隧穿电流与偏压的关系 。
2.
In this letter, the current-voltage characteriazation of a standard tunneling junctions which forms room temperature single electron devices is computed by the solution of Schrodinger equation using WKB method.
本文对形成室温单电子现象的典型隧道结结构模型利用 WKB方法求解薛定谔方程计算其隧穿电流与偏压的关系。
3.
In this letter,the current voltage characteristic of a standard double barrier tunneling junctions (DBTJ),which forms room temperature single electron devices,is computed by solving the time dependent Schr[AKo¨D]dinger equation.
对形成室温单电子器件的典型串联双隧道结结构模型利用求解含时薛定谔方程计算了其隧穿电流与偏压的关系 。
补充资料：隧穿效应
分子式：
CAS号：
性质：见隧道效应。
CAS号：
性质：见隧道效应。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条