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1)  negative-ion element impurities
负离子元素杂质
1.
The weak absorption and laser induced damage threshold (LIDT) of HfO-2 thin film are measured to testify the negative-ion element impurities breakdown model.
探讨了HfO_2薄膜中负离子元素杂质破坏模型,并得出薄膜中的杂质主要来源于镀膜材料。
2)  negative ion element
负离子元素
1.
The negative ion element will become the gas source center and form an ejection in the process of evaporation of coating material, so decrease the damage thre.
结果表明:金属元素、吸收性介质元素的存在对薄膜的损毁有很大负面影响;在紫外波段,Zr元素含量大的薄膜吸收较大;并且提出负离子元素在膜料蒸发过程中形成气源中心,产生喷溅,从而使薄膜的损伤阈值降低。
3)  Impurities [英][im'pjuəriti]  [美][ɪm'pjʊrətɪ]
杂质元素
1.
Determination of Potassium,Calcium and Magnesium Present as Impurities in Lithium Phosphate by Ion-Chromatography;
离子色谱法测定磷酸锂中微量的杂质元素
2.
Determination of Impurities in High Purity Samarium by Inductively Coupled Plasma Mass Spectrometry;
电感耦合等离子体质谱测定高纯金属钐中25种杂质元素
3.
Determination of impurities in nickel by ICP-AES;
ICP-AES法测定金属镍中杂质元素
4)  impurity element
杂质元素
1.
Measurement of impurity element in pure gold with ICP-AES method;
ICP-AES测定纯金中的杂质元素
2.
Determination of ten impurity elements in zinc concentrate and zinc calcine by inductively coupled plasma atomic emission spectrometry;
电感耦合等离子体原子发射光谱法测定锌精矿及焙砂中10种杂质元素
3.
Determination of five impurity elements in bismuth and bismuth oxide by inductively coupled plasma-atomic emission spectrometry;
电感耦合等离子体原子发射光谱法测定铋及氧化铋中5种杂质元素
5)  impurity [英][ɪm'pjʊərəti]  [美][ɪm'pjurətɪ]
杂质元素
1.
Determination of impurity elements in tungsten concentrates by ICP-MS;
ICP-MS法测定钨精矿中杂质元素
2.
Determination of impurity elements in pure copper by inductively coupled plasma atomic emission spectrometry
电感耦合等离子体原子发射光谱法测定纯铜中杂质元素
3.
The paper describes the technique of accurately measuring concentration of standard solution of Pb, Cd, Mg and determining impurity elements contained in the standard solution of Pb, Cd, Mg, Fe by ICP/MS.
本工作建立了ICP/MS准确测量单元素标准溶液Ph,Cd,Mg浓度和Ph,Cd,Mg,Fe单元素标准溶液中杂质元素的方法。
6)  impure elements
杂质元素
1.
Determination of trace impure elements In Red Lead by ICP-AES after Separsted from tri-phase extraction.;
三相萃取分离法测定铅丹中痕量杂质元素
2.
The Way of Electric ARC AES Determining 12 Impure Elements in Metal Silicon;
电弧-AES法测定金属硅中12个杂质元素
3.
Aim To resolve the problems of long period, complex operation and many steps when determining impure elements in ferrosilicon by classic methods.
目的 解决经典化学法测定硅铁中杂质元素周期长、操作复杂、步骤繁琐的问题 。
补充资料:1,3-负离子环加成
分子式:
CAS号:

性质:由烯丙基负离子参与的2+3环加成反应。

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