1) vanadium dioxide(tetragonal-type) film
四方晶系VO2的薄膜
2) VO2 polycrystalline film
VO2多晶薄膜
1.
The lattice distortionhypothesis and grain boundary tunneling are supposed to simulate the resistivity change of the VO2 polycrystalline film with temperature.
用多晶薄膜晶粒-晶界两相结构模型,考虑晶格畸变和载流子对晶界势垒区的隧穿机制,在10～100oC范围内,模拟了离子束增强沉积(IBED)VO2多晶薄膜的相变。
3) VO 2 thin film
VO2薄膜
4) VO 2-x N y thin film
VO2-xNy薄膜
5) VO2 thin film
VO2薄膜
1.
The soft-chemical fabrication technologies of thermochromic VO2 thin films have been introduced.
综述了采用软化学方法制备VO2薄膜的工艺技术特点,以前驱物的划分为主线,着重探讨了前驱物的选择、氧分压和热处理温度等工艺条件对其物相结构与性能的影响,对反应热力学进行了初步的探讨。
6) VO2 thin films
VO2薄膜
1.
V2O5 thin films were prepared by RF magnetron sputtering method with V2O5 ceramic target,which were reduced into VO2 thin films annealed in argon atmosphere at 450℃.
以V2O5陶瓷烧结靶材及射频磁控溅射工艺制备V2O5薄膜,再经氩气气氛退火处理得到VO2薄膜。
2.
A novel method of preparing VO2 thin films―V2O5 melting formation thin films method was developed, whose steps include the pretreating substrates→powder-coated→the thin films formed by the V2O5 melting→annealing under vacuum→VOthin films.
发展了一种新的VO2薄膜制备方法—V2O5熔化成膜法,其基本步骤为:基片预处理—涂粉—熔化成膜—真空退火—VO2薄膜。
3.
The effects of process parameters such as drying temperature, vacuum heat treatment temperature and the sol concentration on the vanadium valences in the VO2 thin films were studied by X-ray photoelectron spectroscopy (XPS).
采用无机溶胶-凝胶法制备了VO2热致变色薄膜,利用XPS系统地研究了烘干温度、真空热处理温度以及溶胶浓度对VO2薄膜中钒价态的影响。
补充资料：四方晶系
分子式：
CAS号：
性质：在惟一具有高次轴的c轴主轴方向存在四重轴或四重反轴特征对称元素的晶体归属于四方晶系。四重高次轴的特征对称性决定了四方晶系晶体的二个副轴基向量和必与主轴垂直，和的大小相等，并彼此直交，即其晶胞必具有四方柱的形状，晶胞参数有a=b≠ c，α=β=γ=90 的关系。
CAS号：
性质：在惟一具有高次轴的c轴主轴方向存在四重轴或四重反轴特征对称元素的晶体归属于四方晶系。四重高次轴的特征对称性决定了四方晶系晶体的二个副轴基向量和必与主轴垂直，和的大小相等，并彼此直交，即其晶胞必具有四方柱的形状，晶胞参数有a=b≠ c，α=β=γ=90 的关系。
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参考词条