1) rapid stepping-annealing
快速分级退火
2) rapid thermal annealing
快速退火
1.
Effect of rapid thermal annealing on the structure and physical properties of Pt/BST/Pt capacitors
快速退火对Pt/BST/Pt电容器结构和性能的影响
2.
5)TiO_3 thin films were prepared by RF-magnetron sputtering method and crystallized by rapid thermal annealing and conventional furnace annealing.
实验表明:钛酸锶钡薄膜在500℃开始结晶,到700℃左右时结晶比较完善,晶化过程中没有出现择优取向;从表面形貌和X射线衍射图综合分析,快速退火的晶化效果要优于常规退火。
3) rapid annealing
快速退火
1.
The optimum rapid annealing process of high speed steel was given.
分析了退火温度、加热速度、冷却方式等因素对高速钢组织转变特点和结果的影响，提出了高速钢的快速退火最佳工艺，并对Ac1＋（10～20）℃退火与A14＋（10～20）℃快速退火工艺进行了对比。
2.
Compared to conventional annealing regime,rapid annealing by pulse-current heating can obviously improve the magne.
与常规退火工艺相比，脉冲电流加热快速退火，可在保持延性基本不变的情况下，明显改善合金的磁性；是获得非晶态Ｆｅ－Ｂ－Ｓｉ合金磁性优化与良好延性配合的有效途径之
3.
The experimental results showed that the complete transformation from fcc FePt to fct FePt was a-chieved by rapid annealing at 850℃ for 30s.
将化学自组装法制备的FePt薄膜进行快速退火,利用X射线衍射仪和振动样品磁强计对薄膜的结构和磁性进行了研究。
4) RTA
[英][,ɑ: ti: 'eɪ] [美]['ɑr 'ti 'e]
快速退火
1.
Preparation of Bi_4Ti_3O_(12) thin films with RTA method;
Bi_4Ti_3O_(12)薄膜及快速退火工艺的研究
2.
Effect of RTA on electrical character of Bi_4Ti_3O_(12) thin film;
快速退火工艺对钛酸铋薄膜电学性能影响的研究
3.
Application of RTA in Improving the Quality of Device Backside Alloy;
快速退火在提高芯片背金质量中的应用
5) rapid thermal annealing(RTA)
快速退火
1.
And rapid thermal annealing(RTA) was preformed on these films respectively for 5 min under different temperatures.
利用射频反应磁控溅射在Si(100)基底上沉积AlN介质薄膜,并在不同温度下对薄膜进行快速退火。
6) RAT
[英][ræt] [美][ræt]
快速退火
1.
MOCVD and RAT were applied to fabricate the amorphous Bi 4Ti 3O 12 ferroelectric thin film on Si<100> substrate,and the phase structure evolution of the films were analyzed with the XRD and SEM techniques.
采用MOCVD工艺 ,制备非晶态Bi4 Ti3O12 薄膜 ,然后经过快速退火处理 ,制备高度择优取向的Bi4 Ti3O12 铁电薄膜 ,运用X射线衍射术分析薄膜材料的结构 ,X射线显微分析仪测量薄膜材料的组份 ,并通过电滞回线的测量 ,研究快速退火对Bi4 Ti3O12 薄膜结构和电性能的影
2.
In this paper, MOCVD and RAT methods were utilized to fabricate the Bi4Ti3O12thinfilms on Si(100) substrate.
采用MOCVD与快速退火工艺,制备高度择优取向的Bi4Ti3O12铁电薄膜。
补充资料：软化退火(见低温退火)
软化退火(见低温退火)
soft-annealing
rU0nhUO tUihUO软化退火(soft一annealing)见低温退火。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条