1) vertical cavity semiconductor surface emitting lasers
半导体垂直腔面发射激光器
1.
The spontaneous emission spectra in the vertical cavity semiconductor surface emitting lasers are obtained.
应用腔量子电动力学和半导体物理学讨论了半导体垂直腔面发射激光器的微腔效应 ,得到了实际腔结构和注入载流子下的半导体垂直腔面发射激光器的自发发射谱 ,计算结果表明 ,半导体分布布拉格反射垂直腔激光器的单方向自发发射可以增强约 2 0 0倍。
2) optically pumped vertical-external-cavity surface-emitting semiconductor lasers
光泵浦垂直外腔面发射半导体激光器
1.
By using these mode-locking devices on novel thin-disk solid state lasers and optically pumped vertical-external-cavity surface-emitting semiconductor lasers(OPS-VECSEL) to obtain high average output power ultrashort pulses are stated,and it is emphasized that the study of high average output power ultrashort pulses laser can be accel.
综述了利用半导体可饱和吸收镜被动锁模薄片式固态激光器及光泵浦垂直外腔面发射半导体激光器,获得高平均输出功率超短脉冲的最新进展,并指出量子点半导体可饱和吸收镜的使用将加速超短高功率脉冲的发展。
3) optically pumped vertical external cavity surface emitting laser
光泵浦半导体垂直外腔面发射激光器
4) optically pumped vertical-external cavity surface emitting semiconductor lasers
光抽运垂直外腔面发射半导体激光器
5) VCSEL
垂直腔表面发射半导体激光器
1.
Rate-equation-based VCSEL Thermal Model and Simulation;
基于速率方程的垂直腔表面发射半导体激光器温度模型与仿真
2.
In order to analyse the laser diode(LD) relevant circuit by a unified manner using any general circuit analytical software(such as PSPICE),this paper describes the model of a vertical-cavity surface-emitting laser(VCSEL) based on the rate equations.
建立了一个垂直腔表面发射半导体激光器(VCSEL)的等效电路模型,该模型以半导体激光器的速率方程为基础,将速率方程表征为由线性电路元件组成的等效电路模型。
3.
Based on the rate equation, a VCSEL model is established, which can simulate the thermal effect and spatial hole burning effect.
建立了一个基于速率方程,考虑了热效应、空间烧孔效应的垂直腔表面发射半导体激光器的模型,并根据其物理和几何特性,通过正交变换简化了速率方程的计算,从而得到一个新的高效的面向系统连接的仿真模型,并将此模型用于激光器和光纤之间的耦合。
6) VCSEL
垂直腔面发射半导体激光器
1.
Based on the logarithmic relation of gain on carrier density,the rate equations are described for multi-quantum well of vertical cavity surface emitting lasers(VCSELs) taking into account the influence of nonradiative depopulation rate.
采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSEL)的速率方程。
2.
Based on changing the logarithmic relation of gain on carrier density, the rate equations were described for multi-quantum well of vertical cavity surface emitting laser (VCSELs) taking into account the influence of nonradiative depopulation rate.
采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSELs)的速率方程。
补充资料：气敏半导体(见传感器半导体材料)
气敏半导体(见传感器半导体材料)
gas sensory sernieonduetor
气敏半导体gas sensory Semieonductor见传感器半导体材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条