1) Sulfur source temperature
硫源温度
1.
The influence of sulfur source temperature on CIS film properties was investigated.
采用电沉积-硫化法制备了CuInS2薄膜,考察了硫源温度对CuInS2薄膜微结构的影响,并分析了硫化过程中的反应动力学。
2) curing temperature
硫化温度
1.
The curing temperature of9 00-2016PR tire in autoclave was determined withJLW 12 Curing Temperature Tester.
００－２０１６ＰＲ轮胎进行硫化温度测定，获得了硫化温度在轮胎各部位的变化情况，并以此得到各部位胶料的硫化程度，发现均存在过硫现象，适当调整工艺条件，硫化外温由１４３℃改为１５１℃，硫化时间缩短５ｍｉｎ后，轮胎机床耐久性能提高显著。
2.
Study on property and curing temperature of low elasticity shock-absorbing blowing material;
较好的硫化温度为433～443K,最佳温度为438K。
3) sulphurizing temperature
渗硫温度
5) temperature of heat reservoir
热源温度
1.
Moreover, the influence of the temperature of heat reservoir on the performance of ferromagnetic magnetic Ericsson refrigeration cycle was investigated.
结合分子场理论和磁系统热力学知识,分析了回热式室温磁Ericsson制冷循环中热量和磁熵的关系,重点研究了热源温度对铁磁质磁Ericsson制冷循环性能的影响。
6) Ga source temperature
Ga源温度
1.
The results indicated that GaN particles in wurtzite structure were obtained at the Ga source temperature of 850℃.
结果表明:当Ga源温度为850℃时得到六方纤锌矿结构的GaN晶体颗粒。
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条