1) Bulk Crystal Silicon
体晶硅
2) silicon crystal
硅晶体
1.
The fixed-abrasive wire sawing technology is supposed to be used for slicing hard-brittle materials such as silicon crystal widely in the future,and the development of high performance fixed-abrasive diamond wire saw is the key of application for this technology.
固结磨料金刚石线锯切割技术有望在将来广泛地应用于硅晶体等硬脆材料的切割,而高性能的固结磨料金刚石锯丝的研制是此技术发展应用的关键。
2.
This treatment is effective in refining and sphericizing primary silicon crystal,forming microconstituents of dispersion.
达到了细化、球化硅晶体的效果， 获得了分布均匀的微观组织。
3) Crystalline silicon
晶体硅
1.
Characterization of crystalline silicon solar cells by electrical parameters;
用电学参数表征晶体硅太阳电池特性
2.
The current solar photovoltaic panels are developing rapidly from the first generation solar cells,which are based on the standard crystalline silicon,to the second generation photo cells using different thin films.
当前的光伏产业正由基于晶体硅的"第一代"技术,向使用薄膜的"第二代"技术转变。
3.
It is pointed out that the current solar photovoltaic panels are developing rapidly from the first generation photo cells,which are based on the standard crystalline silicon,to the second generation photo cells using different thin films.
简要介绍了国内外光伏发电技术研究现状和发展趋势,重点介绍了国内外新的"第三代"光伏发电技术,即"4倍聚焦+跟踪+太阳能炼硅+晶体硅(p型或n型)+薄膜"的光伏发电技术。
4) thin crystalline silicon
薄晶体硅
1.
Back electrode paste of industrialized thin crystalline silicon solar cell;
工业化薄晶体硅太阳电池背电极浆料
6) crystals of silica
硅石晶体
补充资料：碳化硅晶须增强体
分子式：
CAS号：
性质：一种黄绿色或灰绿色的短纤维。直径0.2～1.5μm，粗晶须可达3～5/μm，长度为几十至数百微米，最长者达500μm。密度3.2g/cm3。熔点2690℃，比强度6.4cm(接近理论计算值6.9cm)。采用化学气相沉积法制取。用作氧化铝陶瓷和氮化硅陶瓷增强体制造切削刀具。
CAS号：
性质：一种黄绿色或灰绿色的短纤维。直径0.2～1.5μm，粗晶须可达3～5/μm，长度为几十至数百微米，最长者达500μm。密度3.2g/cm3。熔点2690℃，比强度6.4cm(接近理论计算值6.9cm)。采用化学气相沉积法制取。用作氧化铝陶瓷和氮化硅陶瓷增强体制造切削刀具。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条