1) Minority carrier lifetime
少子寿命
1.
The minority carrier lifetime(τ) scan mapping along the multicrystalline ingot was obtained by means of Microwave Photo Conductive Decay (μ-PCD).
应用微波光电导衰减仪(μ-PCD)测得了铸造多晶硅硅锭沿生长方向少子寿命的分布图。
2.
All these three ways can improve the minority carrier lifetime effectively.
三种吸杂方式都能明显提高多晶硅的少子寿命。
3.
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
用高频光电导衰减法 (PCD)研究了热氧化钝化对直拉硅少子寿命的影响 。
2) carrier lifetime
少子寿命
1.
Oxygen and carbon behavior and minority-carrier lifetimes in multicrystalline silicon(mc-Si) were investigated by means of FTIR and QSSPCD after three step annealing.
对多晶硅片进行三步退火处理,用傅里叶红外光谱仪(FTIR)和准稳态光电导衰减法(QSSPCD)测硅片退火前后氧碳含量及少子寿命,并对单晶硅片做同样处理进行比较。
2.
Through the investigation for variations of minor carrier lifetime before and after light irradiation and annealing and the correlation between light degradation and boron and oxygen concentrations, it was clarified that boron and interstitial oxygen were major components of defect center for light degradation of Bdoped cSi solar cells.
通过光照及退火处理前后少子寿命变化的研究以及光衰减与硼和氧浓度关系的研究,表明引起掺硼晶硅太阳电池光照衰减的主要因素是硼和间隙氧的存在。
3) τ-the life time of minority carriers
τ-少子寿命
4) minority carrier lifetime
少数载流子寿命
1.
The minority carrier lifetime ( τ ) in the base region of a solar cell is one of the most important parameters that affects the conversion efficiency of the device.
太阳电池基区的少数载流子寿命是影响电池效率的重要因素之一。
2.
A new method of microwave reflectance applied in measurement for the minority carrier lifetime in HgCdTe is introduced.
介绍了用微波反射法测量HgCdTe中的少数载流子寿命 ,分析了其测量原理 ,并与接触式的光电导衰减法进行了对比。
3.
Through measuring I-V character of solar cells, short circuit current and open circuit voltage and series resistant and shunt resistant could be gained, and then minority carrier lifetime and dark saturation current are calculated by the new method.
本文通过对测试少数载流子寿命的各种方法进行分析后提出了一种新的测量成品太阳电池基区少数载流子寿命的方法,这种方法通过分析太阳电池的Ⅰ-Ⅴ特性得到基区少数载流子寿命与太阳电池开路电压、短路电流的关系。
5) minority carrier generation lifetime
少子产生寿命
1.
An improved technique of determining minority carrier generation lifetime in semiconductor from C-t transient curve of a MOS capacitor under linear voltage ramp bias was developed.
提出了 MOS电容线性电压扫描法测量半导体少子产生寿命的新方法。
6) the effective minority carry lifetime
有效少子寿命
补充资料：次韵舍弟遇子固忆少述
【诗文】：
归计何时就一廛，寒城回首意茫然。
野林细错黄金日，溪岸宽围碧玉天。
飞兔已闻追騕褭，太阿犹恨失龙泉。
遥知更忆河滨友，从事能忘我独贤。
【注释】：
【出处】：
归计何时就一廛，寒城回首意茫然。
野林细错黄金日，溪岸宽围碧玉天。
飞兔已闻追騕褭，太阿犹恨失龙泉。
遥知更忆河滨友，从事能忘我独贤。
【注释】：
【出处】：
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条